MGFC40V3742 반도체 회로 부품 판매점
10W INTERNALLY MATCHED GaAs FET
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 Mitsubishi Electric |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC40V3742
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC40V3742 is an internally impedance-matched
GaAs power FET especially designed for use in 3.7 ~ 4.2
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 10W (TYP.) @ f=3.7~4.2GHz
High power gain
GLP = 11 dB (TYP.) @ f=3.7~4.2GHz
High power added efficiency
P.A.E. = 32 % (TYP.) @ f=3.7~4.2GHz
Low distortion [ item -51 ]
IM3= -45 dBc(TYP.) @Po=29(dBm) S.C.L.
OUTLINE DRAWING Unit: millimeters (inches)
R1.25
24+ / -0. 3
(1)
0. 6+ / -0. 15
R1.2
(2)
(3)
20. 4+ / -0 .2
APPLICATION
item 01 : 3.7~4.2 GHz band power amplifier
item 51 : 3.7~4.2 GHz band digital radio communication
13.4
QUALITY GRADE
IG
RECOMMENDEDwww.DataSheet4U.com BIAS CONDITIONS
VDS = 10(V)
ID = 2.4 (A)
Rg = 50(ohm) Refer to Bias Procedure
GF-18
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID Drain current
IGR Reverse gate current
IGF Forward gate current
PT Total power dissipation *1
Tch Channel temperature
Tstg
Storage temperature
*1 : Tc=25 deg.C
(Ta=25 deg.C)
Ratings
Unit
-15 V
-15 V
7.5 A
-20 mA
42 mA
42.8 W
175 deg.C
-65 / +175 deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety
when making your circuit designs, with appropriate measures
such as (1)placement of substitutive, auxiliary circuits, (2)use of
non-flammable material or (3)prevention against any malfunction
or mishap.
ELECTRICAL CHARACTERISTICS (Ta=25 deg.C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VDS=3V, VGS=0V
gm Transconductance
VDS=3V, ID=2.2A
VGS(off) Gate to source cut-off voltage
VDS=3V, ID=40mA
P1dB
Output power at 1dB gain compression
GLP
Linear power gain
VDS=10V, ID(RF off)=2.4A, f=3.7~4.2GHz
ID Drain current
P.A.E.
Power added efficiency
IM3 3rd order IM distortion *1
Rth(ch-c) Thermal resistance
*2
Delta Vf method
*1 : item -51, 2 tone test, Po=29dBm Single Carrier Level, f=4.2GHz, Delta f=10MHz
*2 : Channel to case
Min.
-
-
-2
39.5
9
-
-
-42
-
Limits
Typ.
4.5
2
-3
40.5
11
2.4
32
-45
-
Max.
6
-
-4
-
-
-
-
-
3.5
Unit
A
S
V
dBm
dB
A
%
dBc
deg.C/W
MITSUBISHI
ELECTRIC
June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC40V3742
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
MITSUBISHI
ELECTRIC
June/2004
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제조업체: Mitsubishi Electric
( mitsubishi )
MGFC40V3742 data
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[ MGFC40V3742.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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관련 데이터시트
MGFC40V3742
10W INTERNALLY MATCHED GaAs FET - Mitsubishi Electric
MGFC40V3742A
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET - Mitsubishi