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ON Semiconductor |
NCP3712ASNT1
Over Voltage Protected
High Side Switch
This switch is primarily intended to protect loads from transients by
isolating the load from the transient energy rather than absorbing it.
Features
• Capable of Switching Loads of up to 200 mA without External
Rboost
• Switch Shuts Off in Response to an Over Voltage Input Transient
• Features Active Turn Off for Fast Input Transient Protection
• Flexible Over Voltage Protection Threshold Set with External Zener
• Automatic Recovery after Transient Decays Below Threshold
• Withstands Input Transients up to 105 V Peak
• Guaranteed Off State with Enbl Input
• ESD Resistant in Accordance with the 2000 V Human Body Model
• Extremely Low Saturation Voltage
• Pb−Free Packages are Available
Applications Include:
• High Voltage Transient Isolation
• Power Switching to Electronic Modules
•
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DC Power Distribution in Line Operated Equipment
• Buffering Sensitive Circuits from Poorly Regulated Power Supplies
• Pre−conditioning of Voltage Regulator Input Voltage
Vin Vout
Rboost
NCP3712ASNT1
+
P. S.
−
VZ Enbl
or
1 k (min)
Ropt
L
O
A
D
SW
Figure 1. Typical Application Circuit
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 4
1
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MARKING
DIAGRAM
1 TSOP−6
CASE 318G
BAGAYW G
G
1
BAG = Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
INTERNAL CIRCUIT DIAGRAM/
PIN CONFIGURATION
Vin Vout
Q2
(5) R2
(6)
R4
Q1
N.C.
(2)
R1
Rboost
(3)
R3
(4) VZ
(1) Enbl
ORDERING INFORMATION
Device
Package
Shipping†
NCP3712ASNT1 TSOP−6 3000/Tape & Reel
NCP3712ASNT1G TSOP−6 3000/Tape & Reel
(Pb−Free)
NCP3712ASNT3 TSOP−6 10,000/Tape & Reel
NCP3712ASNT3G TSOP−6 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NCP3712ASNT1/D
NCP3712ASNT1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Rating
Symbol
Value
Unit
Input−to−Output Voltage
Reverse Input−to−Vz. Voltage
Reverse Input−to−Rboost Voltage
Output Load Current − Continuous
Enbl Input Current − Continuous
Vz Input Current − Continuous
Rboost Input Current − Continuous
Junction Temperature
Operating Ambient Temperature Range
Storage Temperature Range
Device Power Dissipation (Minimum Footprint)
Derate Above 25°C
Vio
Vin(rev)
Vin(rev)
Iload
Ienbl
Iz
Iboost
TJ
TA
Tstg
PD
−
105
−9.0
− 5.0
−300
5.0
3.0
10
125
−40 to +85
−65 to +150
300
2.4
V
V
V
mA
mA
mA
mA
°C
°C
°C
mW
mW/°C
Latchup Performance:
Positive
Negative
ILatchup
200 mA
200
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device contains ESD protection and exceeds the following tests:
Human Body Model 1500 V per MIL−STD−883, Method 3015.
Machine Model Method 150 V.
A+
1N4004
0.01 mF
TYP
FB*
0.027 mF
TYP
18 V
TYP Ropt
FB*
A−
*FB = MMZ2012 Y601B
Enbl
Ienbl
1
N.C.
2
Rboost
Iboost
3
NCP3712
ASNT1
Vout
6
Vin
5
VZ
4
Iload
IZ
Rload
Renbl
Figure 2. Typical Applications Circuit for Load Dump Transient Protection
KEY
0−500 W
1.0 k TYP
15 13.5 V SUPPLY RAIL
“ENABLE
NOT”
10 INPUT
50%
AMPLITUDE
5
tpLH
DEVICE OUTPUT
VOLTAGE
LOAD
DEPENDENT
EXP DECAY
0
0 5 10 15 20 25 30 35 40 45 50
TIME (ms)
Figure 3. Enable NOT Switching Waveforms
120
100
80
60
40
20 Voff
TYPICAL
INPUT
TRANSIENT
13.5 V
SUPPLY
RAIL
LOAD
DEPENDENT
OUTPUT
EXP DECAY
Von
0
0 50 100 150 200 250 300 350
TIME (ms)
Figure 4. Load Dump Waveforms
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