RSR020P03 반도체 회로 부품 판매점
4V Drive Pch MOS FET
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 ROHM Semiconductor |
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Transistors
4V Drive Pch MOS FET
RSR020P03
RSR020P03
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance
2) Space saving−small surface mount package (TSMT3)
3) 4V drive
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RSR020P03
Taping
TL
3000
zExternal dimensions (Unit : mm)
TSMT3
2.9
0.4
(3)
1.0MAX
0.85
0.7
(1) (2)
0.95 0.95
1.9
0~0.1
0.16
(1) Gate
(2) Source
(3) Drain
Each lead has same dimensions
Abbreviated symbol : WZ
zInner circuit
(3)
(1)
∗1
∗2
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−30
±20
±2
±8
−0.8
−8
1
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ∗
Limits
125
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
1/2
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) −1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
RDS (on)∗
−
−
−
85 120 mΩ ID= −2A, VGS= −10V
135 190 mΩ ID= −1A, VGS= −4.5V
150 210 mΩ ID= −1A, VGS= −4V
Forward transfer admittance Yfs ∗ 1.4 − − S VDS= −10V, ID= −1A
Input capacitance
Ciss
− 370 −
pF VDS= −10V
Output capacitance
Coss − 80 − pF VGS=0V
Reverse transfer capacitance Crss
− 55 − pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) ∗ − 8 − ns VDD −15V
tr ∗
td (off) ∗
−
−
10
35
−
−
ns ID= −1A
VGS= − 10V
ns RL=15Ω
tf ∗ − 11 − ns RG=10Ω
Total gate charge
Qg ∗ − 4.3 − nC VDD −15V VGS= −5V
Gate-source charge
Qgs ∗ − 1.4 − nC ID= −2A
Gate-drain charge
Qgd ∗ − 1.5 − nC RL=7.5Ω RG=10Ω
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD ∗
−
− −1.2 V IS= −0.8A, VGS=0V
∗Pulsed
RSR020P03
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RSR020P03 data
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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전력반도체 문의 : 010-3582-2743
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