UMF17N 반도체 회로 부품 판매점
Power management
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 ROHM Semiconductor |
www.DataSheet4U.com
Transistors
EMF17 / UMF17N
Power management (dual transistors)
EMF17 / UMF17N
2SA1774 and DTC123EE are housed independently in a EMT or UMT package.
zApplication
Power management circuit
zFeatures
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
zStructure
Silicon epitaxial planar transistor
zExternal dimensions (Unit : mm)
EMF17
(4)
(5)
(6)
1.2
1.6
(3)
(2)
(1)
Each lead has same dimensions
ROHM : EMT6 Abbreviated symbol : F17
UMF17N
zEquivalent circuits
(3) (2) (1)
DTr2
R1
R2
Tr1
(4) (5)
R1=2.2kΩ
R2=2.2kΩ
(6)
1.25
2.1
0.1Min.
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88 Abbreviated symbol :F17
zPackage, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit(pieces)
EMF17
EMT6
F17
T2R
8000
UMF17N
UMT6
F17
TR
3000
Rev.A
1/4
Transistors
EMF17 / UMF17N
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−60
Collector-emitter voltage
VCEO
−50
Emitter-base voltage
VEBO
−6
Collector current
IC −150
Collector power dissipation PC 150 (TOTAL)
Junction temperature
Tj 150
Storage temperature
Tstg
∗ 120mW per element must not be exceeded.
−55 to +150
Unit
V
V
V
mA
mW ∗
°C
°C
DTr2
Parameter
Symbol
Supply voltage
VCC
Input voltage
VIN
Collector current
IC
Output current
IO
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
Limits
50
−10 to +20
100
100
150(TOTAL)
150
−55 to +150
Unit
V
V
mA ∗1
mA
mW ∗2
°C
°C
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−60
−50
−6
−
−
−
180
−
−
Typ.
−
−
−
−
−
−
−
140
4
Max.
−
−
−
−0.1
−0.1
−0.5
390
−
5
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC = −50µA
IC = −1mA
IE = −50µA
VCB = −60V
VEB = −6V
IC/IB = −50mA/−5mA
VCE = −6V, IC = −1mA
VCE = −12V, IE = 2mA, f = 100MHz
VCB = −12V, IE = 0A, f = 1MHz
DTr2
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor.
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
fT
R1
R2/R1
Min.
−
3.0
−
−
−
20
−
1.54
0.8
Typ.
−
−
100
−
−
−
250
2.2
1.0
Max.
0.5
−
300
3.8
0.5
−
−
2.86
1.2
Unit
V
V
mV
mA
µA
−
MHz
kΩ
−
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=20mA
VO=10mA, II=0.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=20mA
VCE=10V, IE=−5mA, f=100MHz ∗
−
−
Rev.A
2/4
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UMF17N data
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[ UMF17N.PDF ]
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