MGF4954A 반도체 회로 부품 판매점
(MGF4953A / MGF4954A) SUPER LOW NOISE InGaAs HEMT
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 Mitsubishi Electric |
www.DataSheet4U.com
June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
DESCRIPTION
The MGF4953A/MGF4954A super-low noise HEMT (High
Electron Mobility Transistor) is designed for use in C to K band
amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
MGF4953A : NFmin. = 0.40dB (Typ.)
MGF4954A : NFmin. = 0.60dB (Typ.)
Fig.1
High associated gain
@ f=12GHz
Gs = 13.5dB (Typ.)
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 3000pcs./reel
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
PT Total power dissipation
Tch Channel temperature
Tstg Storage temperature
ELECTRICAL CHARACTERISTICS
Synbol
Parameter
V(BR)GDO
IGSS
IDSS
VGS(off)
gm
Gs
NFmin.
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Transconductance
Associated gain
Minimum noise figure
(Ta=25°C )
Ratings
-4
-4
60
50
125
-65 to +125
Unit
V
V
mA
mW
°C
°C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
(Ta=25°C )
Test conditions
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,ID=10mA
VDS=2V,
ID=10mA
MGF4953A
f=12GHz
MGF4954A
MIN.
-3
--
15
-0.1
--
12.0
--
--
Limits
TYP.
--
--
--
--
70
13.5
0.40
0.60
MAX
--
50
60
-1.5
--
--
0.50
0.80
Unit
V
µA
mA
V
mS
dB
dB
dB
MITSUBISHI
(1/5)
June/2004
June/2004
Fig.1
I
Top
RWUYW
TWUXW
B0
2EG
J
b
H
I
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
Side
ç
ç
Unit : mm
Bottom
H
©
I
©
I
J
ç
from "A" side view
Square shape electrode is Drain
HM Gate
IM Source
JM Drain
MITSUBISHI
(2/5)
June/2004
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제조업체: Mitsubishi Electric
( mitsubishi )
MGF4954A data
데이터시트 다운로드 :
[ MGF4954A.PDF ]
[ MGF4954A 다른 제조사 검색 ]
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