K1317 반도체 회로 부품 판매점
MOSFET ( Transistor ) - 2SK1317
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 Hitachi Semiconductor |
2SK1317
Silicon N-Channel MOS FET
Application
High speed power switching
www.DataSheet4U.com
Features
• High breakdown voltage VDSS = 1500 V
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-3P
D
G
1
2
3 1. Gate
2. Drain
(Flange)
S
3. Source
2SK1317
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
www.DataSheet4U2..coVmalue at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
1500
±20
2.5
7
2.5
100
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 1500
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
—
—
2.0
—
Forward transfer admittance |yfs|
0.45
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
—
—
—
—
—
Body to drain diode reverse
recovery time
t rr
—
Note: 1. Pulse test
Typ
—
—
—
—
9
0.75
990
125
60
17
70
110
60
0.9
1750
Max
—
±1
500
4.0
12
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 1200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 15 V *1
ID = 1 A, VDS = 20 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 2 A, VGS = 10 V,
RL = 15 Ω
IF = 2 A, VGS = 0
IF = 2 A, VGS = 0,
diF/dt = 100 A/µs
2
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제조업체: Hitachi Semiconductor
( hitachi )
K1317 data
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[ K1317.PDF ]
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