CY62158CV33 반도체 회로 부품 판매점
(CY62158CV25 - CY62158CV33) 1024K x 8 MoBL Static RAM
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 Cypress Semiconductor |
www.DataSheet4U.com
CY62158CV25/30/33
MoBL™
Features
• High Speed
— 55 ns and 70 ns availability
• Voltage range:
— CY62158CV25: 2.2V–2.7V
— CY62158CV30: 2.7V–3.3V
— CY62158CV33: 3.0V–3.6V
• Ultra low active power
— Typical active current: 1.5 mA @ f = 1 MHz
— Typical active current: 5.5 mA @ f = fmax(70 ns speed)
• Low standby power
• Easy memory expansion with CE1, CE2 and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
Functional Description
The CY62158CV25/30/33 are high-performance CMOS static
RAMs organized as 1024K words by 8 bits. This device fea-
tures advanced circuit design to provide ultra-low active cur-
rent. This is ideal for providing More Battery Life™ (MoBL™)
Logic Block Diagram
1024K x 8 MoBL Static RAM
in portable applications such as cellular telephones. The de-
vice also has an automatic power-down feature that signifi-
cantly reduces power consumption by 80% when addresses
are not toggling. The device can be put into standby mode
reducing power consumption by more than 99% when dese-
lected (CE1 HIGH or CE2 LOW).
Writing to the device is accomplished by taking Chip Enable 1
(CE1) and Write Enable (WE) inputs LOW and Chip Enable 2
(CE2) HIGH. Data on the eight I/O pins (I/O0 through I/O7) is
then written into the location specified on the address pins (A0
through A19).
Reading from the device is accomplished by taking Chip En-
able 1 (CE1) and Output Enable (OE) LOW and Chip Enable
2 (CE2) HIGH while forcing Write Enable (WE) HIGH. Under
these conditions, the contents of the memory location speci-
fied by the address pins will appear on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE1
LOW and CE2 HIGH), the outputs are disabled (OE HIGH), or
during a write operation (CE1 LOW and CE2 HIGH and WE
LOW).
The CY62158CV25/30/33 are available in a 48-ball FBGA
package.
AAAAAAAAAAAAA1119121234507086
Data in Drivers
1024K x 8
ARRAY
CE1
CE2
WE
OE
COLUMN
DECODER
POWER
DOWN
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-05019 Rev. *C
Revised April 24, 2002
www.DataSheet4U.com
CY62158CV25/30/33
MoBL™
Pin Configurations [1, 2]
FBGA
Top View
12 34 56
NC OE A0 A1 A2 CE2
NC NC A3 A4 CE1 NC
I/O0 DNU A5 A6 NC I/O4
VSS I/O1 A17 A7 I/O5 VCC
VCC I/O2 NC A16 I/O6 VSS
I/O3 NC A14 A15 NC I/O7
NC NC A12 A13 WE NC
A18 A8 A9 A10 A11 A19
A
B
C
D
E
F
G
H
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature . ................................–65°C to +150°C
Ambient Temperature with
Power Applied. ..............................................55°C to +125°C
Supply Voltage to Ground Potential ...–0.5V to Vccmax + 0.5V
DC Voltage Applied to Outputs
in High Z State[3].................................... –0.5V to VCC + 0.5V
DC Input Voltage[3].................................–0.5V to VCC + 0.5V
Output Current into Outputs (LOW)..............................20 mA
Static Discharge Voltage ............................................>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .....................................................>200 mA
Operating Range
Product
CY62158CV25
CY62158CV30
CY62158CV33
Range
Industrial
Ambient Temperature
–40°C to +85°C
VCC
2.2V to 2.7V
2.7V to 3.3V
3.0V to 3.6V
Product Portfolio
Product
CY62158CV25
CY62158CV30
CY62158CV33
VCC Range
Min. Typ.[4] Max.
2.2V 2.5V 2.7V
2.7V 3.0V 3.3V
3.0V 3.3V 3.6V
Speed
55 ns
70 ns
55 ns
70 ns
55 ns
70 ns
Power Dissipation (Industrial)
Operating (ICC)
f = 1 MHz
Typ.[4] Max.
f = fmax
Typ.[4] Max.
Standby (ISB2)
Typ.[4]
Max.
1.5 mA 3 mA 7 mA 15 mA 6 µA
25 µA
1.5 mA 3 mA 5.5 mA 12 mA
1.5 mA 3 mA 7 mA 15 mA 8 µA
25 µA
1.5 mA 3 mA 5.5 mA 12 mA
1.5 mA 3 mA 7 mA 15 mA 10 µA
30 µA
1.5 mA 3 mA 5.5 mA 12 mA
Notes:
1. NC pins are not connected to the die.
2. C2 (DNU) can be left as NC or VSS to ensure proper application.
3. VIL(min.) = –2.0V for pulse durations less than 20 ns.
4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25°C.
Document #: 38-05019 Rev. *C
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관련 데이터시트
CY62158CV30
(CY62158CV25 - CY62158CV33) 1024K x 8 MoBL Static RAM - Cypress Semiconductor
CY62158CV33
(CY62158CV25 - CY62158CV33) 1024K x 8 MoBL Static RAM - Cypress Semiconductor