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Hitachi Semiconductor |
2SK1328, 2SK1329
Silicon N-Channel MOS FET
Application
High speed power switching
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Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
TO-3PFM
D
G1
2
3
1. Gate
2. Drain
3. Source
S
2SK1328, 2SK1329
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1328
2SK1329
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
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Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
I DR
Pch*2
Tch
Tstg
Ratings
450
500
±30
12
48
12
60
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2
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