29LV320T-70 반도체 회로 부품 판매점
EN29LV320
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 Eon Silicon Solution |
EN29LV320
EN29LV320
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
• Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
• High performance
- Access times as fast as 70 ns
• Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1 µA current in standby or automatic
sleep mode.
• Flexible Sector Architecture:
- Eight 8-Kbyte sectors, sixty-three 64k-byte
sectors.
- 8-Kbyte sectors for Top or Bottom boot.
- Sector/Sector Group protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
• High performance program/erase speed
- Word program time: 8µs typical
- Sector erase time: 500ms typical
- Chip erase time: 70s typical
• JEDEC Standard compatible
• Standard DATA# polling and toggle bits
feature
• Unlock Bypass Program command supported
• Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
• Support JEDEC Common Flash Interface
(CFI).
• Low Vcc write inhibit < 2.5V
• Minimum 100K program/erase endurance
cycles.
• RESET# hardware reset pin
- Hardware method to reset the device to read
mode.
• WP#/ACC input pin
- Write Protect (WP#) function allows
protection of outermost two boot sectors,
regardless of sector protect status
- Acceleration (ACC) function provides
accelerated program times
• Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm FBGA
• Commercial and Industrial Temperature
Range.
GENERAL DESCRIPTION
The EN29LV320 is a 32-Megabit, electrically erasable, read/write non-volatile flash memory, organized
as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8µs. The
EN29LV320 features 3.0V voltage read and write operation, with access times as fast as 70ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV320 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector or
full Chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K
program/erase cycles on each Sector.
.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2005/05/31
CONNECTION DIAGRAMS
EN29LV320
FBGA
Top View, Balls Facing Down
A6
A13
A5
B6
A12
B5
C6
A14
C5
D6
A15
D5
E6
A16
E5
F6 G6 H6
BYTE# DQ15/A-1
Vss
F5 G5 H5
A9 A8 A10
A4 B4 C4
WE#
RESET#
NC
A3 B3 C3
RY/BY# WP# /ACC
A2 B2
A18
C2
A7 A17
A1 B1
A6
C1
A3 A4
A2
A11
D4
A19
D3
A20
D2
A5
D1
A1
DQ7
E4
DQ5
E3
DQ2
E2
DQ0
E1
A0
DQ14
F4
DQ13
DQ6
G4 H4
DQ12 Vcc DQ4
F3
DQ10
F2
G3
DQ11
G2
H3
DQ3
H2
DQ8
F1
DQ9
G1
DQ1
H1
CE# OE# Vss
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. D, Issue Date: 2005/05/31
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