IRIS-F6426S 반도체 회로 부품 판매점
INTEGRATED SWITCHER
|
|
 International Rectifier |
IRIS-F6426S
Features
• Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology.
INTEGRATED SWITCHER
• Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
Package Outline
• Low start-up circuit current (100uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit since the
MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in step drive circuit
• Built-in low frequency PRC mode (≒20kHz)
• Various kinds of protection functions
• Pulse-by-pulse Overcurrent Protection (OCP)
• Overvoltage Protection with latch mode (OVP)
• Thermal Shutdown with latch mode (TSD)
Descriptions
TO-247 Fullpack (5 Lead)
Key Specifications
Type
MOSFET
VDSS(V)
RDS(ON)
MAX
IRIS-F6426S
450
0.58Ω
AC input(V)
100±15%
120±15%
Pout(W)
Note 1
145
190
IRIS-F6426S is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant
(including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications.
This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing
external components count and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio
Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
IRIS-F6400
GND
Vin
D
S
OCP/FB
www.irf.com
IRIS-F6426S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
IDpeak Drain Current
*1
IDMAX Maximum switching current *5
Terminals Max. Ratings Units
3-2 16 A
3-2 16 A
Note
Single Pulse
V2-5=0.78V
Ta=-20~+125℃
Single Pulse
EAS Single pulse avalanche energy *2
3-2
327 mJ IL peak=6.7A
Vin Input voltage for control part
4-5 35 V
Vth O.C.P/F.B Pin voltage
1-5 6 V
52 W With infintite heatsink
PD1 Power dissipation for MOSFET *3 3-2
2.8 W Without heatsink
Power dissipation for control part
Specified by
PD2
(Control IC) *4
4-5 0.49 W Vin×Iin
Internal frame temperature
Refer to recommended
TF in operation
- -20 ~ +125 ℃ operating temperature
Top Operating ambient temperature
- -20 ~ +125 ℃
Tstg Storage temperature
- -40 ~ +125 ℃
Tch Channel temperature
- 150 ℃
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
Fig.1
V2-5
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 5 due to patterning, the maximum switching current decreases as shown by V2-5 in Fig.1
Accordingly please use this device within the decrease value, referring to the derating curve of the
maximum switching current.
www.irf.com
|
PDF 파일 내의 페이지 : 총 7 페이지
제조업체: International Rectifier
( ir )
IRIS-F6426S data
데이터시트 다운로드 :
[ IRIS-F6426S.PDF ]
[ IRIS-F6426S 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
