IRIS-X6757 반도체 회로 부품 판매점
INTEGRATED SWITCHER
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 International Rectifier |
IRIS-X6757
Features
• 7-pin SIP type full molded package, optimum IC for low-height SMPS.
INTEGRATED SWITCHER
Package Outline
• Oscillator is provided on the monolithic control with adopting On-Chip
Trimming Technology
• Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
• Low start-up circuit current (100uA max)
•Avalanche energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge absorption
circuit since the MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in step drive circuit
• Built-in low frequency PWM mode ( 22 kHz)
• UVLO Burst Standby
• Two operational modes by auto switching functions according to load
For middle~heavy load operation : QR mode
TO-220 Fullpack (7 Lead)
For light~middle load operation : 1 Bottom Skip mode
• Various kinds of protection functions
Key Specifications
Pulse-by-Pulse Overcurrent Protection (OCP)
Overvoltage Protection with Latch mode (OVP)
Overload Protection with Latch mode (OLP)
The maximum limit of on-time
T ype
MOSFET
VDSS(V)
IRIS-X6757
650
RDS(ON)
MAX
AC input(V)
230 15%
85 to 264
P out (W )
Note 1
300
180
Description
IRIS-X6757 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PWM)
fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes high efficiency, low noise, downsizing and
standardizing of a power supply system reducing external component count and simplifying the circuit design.
Typical Connection Diagram
Note 1:
The Pout (W) represents the thermal rating at Quasi-Resonant operation, and the peak power output is obtained by approximating 120 to
140 % of the above listed value. When the output voltage is low, and the ON-duty is narrow, the Pout (W) shall become lower than that
of the above.
www.irf.com
IRIS-X6757
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The
thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
Defi ni ti on
IDpeak Drain Current * 1
IDMAX Maximum switching current *2
EAS Single pulse avalanche energy *3
Vcc
VSSOLP
IFB
VFB
VOCP BD
Input voltage for control part
SS/OLP pin voltage
FB pin inflow current
FB pin voltage
O.C.P/F.B pin voltage
PD1 Power dissipation of MOSFET *4
PD2
Power dissipation for control part
(MIC) *5
TF
Internal frame temperature in
operation
Top Operating ambient temperature
Tstg Storage temperature
Tch Channel temperature
Termi nal s
1-3
1-3
Max.
Rati ngs
18
18
1 - 3 326
4 - 3 35
5 - 3 -0.5 ~ 6.0
6- 3 10
6- 3 -0.5 ~ 9.0
7- 3 -1.5 ~ 5.0
1-3
44
2.8
4 - 3 0.8
- -20 ~ +125
- -20 ~ +125
- -40 ~ +125
- 150
Uni ts
A
Note
Single Pulse
A Ta=-20~+125
Single Pulse
mJ VDD=30V,L=50mH
IL=3.53A
V
V
mA
V within the limits of IFB
V
W
With infinite heatsink
Without heatsink
W
Specified by Vcc x
Icc
Refer to recommended
operating temperature
*1 Refer to MOS FET A.S.O. curve
*2 Maximum switching current
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of the MOS FET.
*3 Refer to MOS FET Tch-EAS curve
*4 Refer to MOS FET Ta-PD1 curve
www.irf.com
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제조업체: International Rectifier
( ir )
IRIS-X6757 data
데이터시트 다운로드 :
[ IRIS-X6757.PDF ]
[ IRIS-X6757 다른 제조사 검색 ]
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