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Philips |
PMN45EN
TrenchMOS™ enhanced logic level FET
Rev. 01 — 27 September 2002
M3D302
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMN45EN in SOT457 (TSOP6).
2. Features
s TrenchMOS™ technology
s Very fast switching
s Low threshold voltage
s Surface mount package.
3. Applications
s Battery powered motor control
s Load switch in notebook computers
s High speed switch in set top box power supplies
s Driver FET in DC to DC converters.
4. Pinning information
Table 1: Pinning - SOT457 (TSOP6), simplified outline and symbol
Pin Description
Simplified outline
1,2,5,6
3
drain (d)
gate (g)
654
4 source (s)
12 3
Top view
MBK092
SOT457 (TSOP6)
Symbol
d
g
MBB076
s
Philips Semiconductors
PMN45EN
TrenchMOS™ enhanced logic level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 °C ≤ Tj ≤ 150 °C
Tsp = 25 °C; VGS = 10 V
Tsp = 25 °C
VGS = 10 V; ID = 3 A; Tj = 25 °C
VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage (DC)
VGS gate-source voltage (DC)
ID drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C ≤ Tj ≤ 150 °C
Tsp = 25 °C; VGS = 10 V
Tsp = 70 °C; VGS = 10 V
Tsp = 25 °C; pulsed; tp ≤ 10 µs
Tsp = 25 °C
IS source (diode forward) current (DC) Tsp = 25 °C
Typ Max Unit
- 30 V
- 5.2 A
- 1.75 W
- 150 °C
32 40 mΩ
42 50 mΩ
Min Max Unit
- 30 V
- 20 V
- 5.2 A
- 4.2 A
- 21.1 A
- 1.75 W
−55 +150 °C
−55 +150 °C
- 1.45 A
9397 750 10193
Product data
Rev. 01 — 27 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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