PM75CSE060 반도체 회로 부품 판매점
FLAT-BASE TYPE INSULATED PACKAGE
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 Mitsubishi Electric Semiconductor |
PM75CSE060
MITMSUITBSIUSBHIS<HINI T<EINLTLEIGLLEINGTENPOT WPOERWEMRODMUOLDEUSL>ES>
PM75CPMS7E5C0S6E0060
FLAFTL-ABTA-SBEASTEYPTEYPE
INSIUNLSAUTLEADTEPDACPKAACGKEAGE
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
For example, typical VCE(sat)=1.7V
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
• 3φ 75A, 600V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 5.5/7.5kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
110±1
95±0.5
2-2.54 2-2.54 2-2.54 6-2.54
17.02 10.16 10.16 10.16
3.22
123
4 56
78 9
10 12 14 16
11 13 15
12
4-φ5.5
MOUNTING HOLES
Screwing depth
Min9.0
Terminal code
1. VUPC
2. UP
3. VUP1
4. VVPC
5. VP
6. VVP1
7. VWPC
8. WP
9. VWP1
10. VNC
11. VN1
12. NC
13. UN
14. VN
15. WN
16. FO
W
0.5±0.3
24.5
A
VU
26
67.4
16- 0.64
26
4-R6
6-M5NUTS
2-φ2.54
21.2
22
+1.0
–0.5
φ2.54
3.22 2-2.54 0.64
LABEL
A : DETAIL
Sep. 2001
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CSE060
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Rfo=1.5kΩ
NC Fo
VNC WN
VN1
VN
Rfo
WP VWP1 VP VVP1 UP VUP1
UN VWPC
VVPC
VUPC
Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc
Gnd Si Out Gnd Si Out
Gnd Si Out Gnd Si Out Gnd Si Out Gnd Si Out
Th
NC N W V U P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCES
±IC
±ICP
PC
Tj
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
Condition
VD = 15V, VCIN = 15V
TC = 25°C
TC = 25°C
TC = 25°C
CONTROL PART
Symbol
Parameter
VD Supply Voltage
VCIN
VFO
IFO
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Condition
Applied between : VUP1-VUPC
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC
WP-VWPC, UN • VN • WN-VNC
Applied between : FO-VNC
Sink current at FO terminal
Ratings
600
75
150
255
–20 ~ +150
Ratings
20
20
20
20
Unit
V
A
A
W
°C
Unit
V
V
V
mA
Sep. 2001
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PDF 파일 내의 페이지 : 총 6 페이지
제조업체: Mitsubishi Electric Semiconductor
( mitsubishi )
PM75CSE060 data
데이터시트 다운로드 :
[ PM75CSE060.PDF ]
[ PM75CSE060 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
