NTE456 반도체 회로 부품 판매점
N-Channel Silicon JFET General Purpose Amp / Switch
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 NTE |
NTE456
N–Channel Silicon JFET
General Purpose Amp, Switch
Description:
The NTE456 is an N–Channel junction silicon field–effect transistor in a TO72 type package designed
for general purpose amplifier and switching applications.
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain–Gate Voltge, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Gate–Source Breakdown Voltage V(BR)GSS VDS = 0, IG = –10µA
Gate Reverse Current
Gate–Source Cutoff Voltage
Gate–Source Voltage
IGSS
VGS(off)
VGS
VGS= –15V, VDS = 0
VGS= –15V, VDS = 0, TA = +150°C
VDS = 15V, ID = 0.1nA
VDS = 15V, ID = 200µA
ON Characteristics
Zero–Gate–Voltage Drain Current
Static Drain–Source On Resistance
IDSS
rDS(on)
VDS = 15V, VGS = 0
VDS = 0, VGS = 0
Min Typ Max Unit
–30 –
–
V
– – –0.1 nA
– – –100 nA
– – –6 V
–1.0 – –5.0 V
2.0 – 6.0
– 400 –
mA
Ω
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Small–Signal Characteristics
Forward Transfer Admittance
Common Source
|yfs| VDS = 15V, VGS = 0, f = 1kHz, Note 1 2000 –
Output Admittance Common Source
Input Capacitance
Reverse Transfer Capacitance
Common–Source Output
Capacitance
|yos|
Ciss
Crss
Cosp
VDS = 15V, VGS = 0, f = 1kHz
VDS = 15V, VGS = 0, f = 1kHz
VDS = 15V, VGS = 0, f = 1kHz
VDS = 15V, VGS = 0, f = 30MHz
––
– 4.5
– 1.2
– 1.5
Functional Characteristics
Noise Figure
NF VDS = 15V, VGS = 0, RS = 1MΩ, f =
100Hz
––
Max Unit
5000 µmhos
20 µmhos
6.0 pF
2.0 pF
– pF
2.5 dB
Note 1. Pulse test: Pulse Width = 630ms, Duty Cycle = 10%.
.190
(4.82)
.500
(12.7)
Min
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.018 (0.45) Dia
Drain
Source
Gate
45°
Case
.040 (1.02)
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제조업체: NTE
( nte )
NTE456 data
데이터시트 다운로드 :
[ NTE456.PDF ]
[ NTE456 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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