MCM6706CRJ5.5R 반도체 회로 부품 판매점
32K x 8 Bit Static Random Access Memory
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 Motorola Semiconductors |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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32K x 8 Bit Static Random
Access Memory
The MCM6706CR is a 262,144 bit static random access memory organized
as 32,768 words of 8 bits. Static design eliminates the need for external clocks
or timing strobes.
Output enable (G) is a special control feature that provides increased system
flexibility and eliminates bus contention problems.
The MCM6706CR meets JEDEC standards and is available in a revolutionary
pinout 300 mil, 32–lead surface–mount SOJ package.
• Single 5.0 V ± 10% Power Supply
• Fully Static — No Clock or Timing Strobes Necessary
• All Inputs and Outputs Are TTL Compatible
• Three State Outputs
• Fast Access Times: MCM6706CR–5 = 5 ns
MCM6706CR–5.5 = 5.5 ns
• Center Power and I/O Pins for Reduced Noise
BLOCK DIAGRAM
A
A VCC
VSS
A
A MEMORY
A
ROW
MATRIX
DECODER
512 ROWS x 64 x 8
A COLUMNS
A
A
A
DQ0 COLUMN I/O
INPUT
DATA
COLUMN DECODER
CONTROL
DQ7
A AA A AA
E
W
G
MCM6706CR
J PACKAGE
300 MIL SOJ
CASE 857–02
PIN ASSIGNMENT
A1
A2
A3
A4
E5
DQ 6
DQ 7
VCC 8
VSS 9
DQ 10
DQ 11
W 12
A 13
A 14
A 15
A 16
32 NC
31 A
30 A
29 A
28 G
27 DQ
26 DQ
25 VSS
24 VCC
23 DQ
22 DQ
21 A
20 A
19 A
18 A
17 NC
PIN NAMES
A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Address
W . . . . . . . . . . . . . . . . . . . . . . . . . Write Enable
E . . . . . . . . . . . . . . . . . . . . . . . . . . Chip Enable
G . . . . . . . . . . . . . . . . . . . . . . . Output Enable
DQ . . . . . . . . . . . . . . . . . . . Data Input/Output
VCC . . . . . . . . . . . . . . . . + 5 V Power Supply
VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . Ground
NC . . . . . . . . . . . . . . . . . . . . . . No Connection
This document contains information on a new product under development. Motorola reserves the right to change or discontinue this product without notice.
REV 1
10/9/96
M© OMoTtoOroRla,OInLc.A19F96AST SRAM
MCM6706CR
1
TRUTH TABLE
EG
HX
LH
LL
LX
W
X
H
H
L
Mode
Not Selected
Read
Read
Write
I/O Pin
High–Z
High–Z
Dout
Din
Cycle
—
—
Read Cycle
Write Cycle
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
– 0.5 to + 7.0
V
Voltage Relative to VSS for Any Pin
Except VCC
Vin, Vout – 0.5 to VCC + 0.5 V
Output Current
Iout ± 30 mA
Power Dissipation
PD 2.0 W
Temperature Under Bias
Tbias
– 10 to + 85
°C
Operating Temperature
TA
0 to + 70
°C
Storage Temperature — Plastic
Tstg
– 55 to + 125
°C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED
OPERATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid appli-
cation of any voltage higher than maximum
rated voltages to this high–impedance circuit.
This BiCMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Supply Voltage (Operating Voltage Range)
Input High Voltage
VCC
VIH
4.5
2.2
Input Low Voltage
VIL – 0.5**
* VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width ≤ 2.0 ns) or I ≤ 30.0 mA.
** VIL (min) = – 0.5 V dc @ 30.0 mA; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns) or I ≤ 30.0 mA.
DC CHARACTERISTICS
Parameter
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Output Leakage Current (E = VIH or G = VIH, Vout = 0 to VCC)
Output High Voltage (IOH = – 4.0 mA)
Output Low Voltage (IOL = + 8.0 mA)
Symbol
Ilkg(I)
Ilkg(O)
VOH
VOL
Typ Max Unit
5.0 5.5 V
— VCC + 0.3* V
— 0.8 V
Min Max Unit
—
± 1.0
µA
—
± 1.0
µA
2.4 — V
— 0.4 V
POWER SUPPLY CURRENTS
Parameter
Symbol MCM6706CR–5 MCM6706CR–5.5 Unit
Notes
AC Active Supply Current
(Iout = 0 mA, VCC = max, f = fmax)
ICCA
240
235 mA 1, 2, 3
AC Standby Current (E = VIH, VCC = max, f = fmax)
ISB1
120
115 mA 1, 2, 3
CMOS Standby Current (VCC = max, f = 0 MHz,
E ≥ VCC – 0.2 V, Vin ≤ VSS, or ≥ VCC – 0.2 V)
ISB2
30
30 mA
NOTES:
1. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V).
2. All addresses transition simultaneously low (LSB) and then high (MSB).
3. Data states are all zero.
MCM6706CR
2
MOTOROLA FAST SRAM
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MCM6706CRJ5.5
32K x 8 Bit Static Random Access Memory - Motorola Semiconductors
MCM6706CRJ5.5R
32K x 8 Bit Static Random Access Memory - Motorola Semiconductors