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MCM63Z819TQ15 반도체 회로 부품 판매점

128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM



Motorola Semiconductors 로고
Motorola Semiconductors
MCM63Z819TQ15 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
128K x 36 and 256K x 18 Bit
Flow–Through ZBTRAM
Synchronous Fast Static RAM
The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide
zero bus turnaround. The ZBT RAM allows 100% use of bus cycles during
back–to–back read/write and write/read cycles. The MCM63Z737 is organized
as 128K words of 36 bits each and the MCM63Z819 is organized as 256K words
of 18 bits each, fabricated with high performance silicon gate CMOS technology.
This device integrates input registers, a 2–bit address counter, and high speed
SRAM onto a single monolithic circuit for reduced parts count in communication
applications. Synchronous design allows precise cycle control with the use of an
external clock (CK). CMOS circuitry reduces the overall power consumption of
the integrated functions for greater reliability.
Addresses (SA), data inputs (DQ), and all control signals except output enable
(G) and linear burst order (LBO) are clock (CK) controlled through positive–
edge–triggered noninverting registers.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (CK) input. This feature eliminates complex off–chip write pulse generation
and provides increased timing flexibility for incoming signals.
For read cycles, a flow–through SRAM allows output data to simply flow freely
from the memory array.
3.3 V LVTTL and LVCMOS Compatible
MCM63Z737/MCM63Z819–11 = 11 ns Access/15 ns Cycle (66 MHz)
MCM63Z737/MCM63Z819–15 = 15 ns Access/20 ns Cycle (50 MHz)
Selectable Burst Sequencing Order (Linear/Interleaved)
Internally Self–Timed Write Cycle
Single–Cycle Deselect
Byte Write Control
ADV Controlled Burst
100–Pin TQFP Package
Order this document
by MCM63Z737/D
MCM63Z737
MCM63Z819
TQ PACKAGE
TQFP
CASE 983A–01
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by
Micron Technology, Inc. and Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
2/6/98
©MMOoTtoOrolRa,OIncL.A19F98AST SRAM
MCM63Z737DMCM63Z819
1


MCM63Z819TQ15 데이터시트, 핀배열, 회로
PIN ASSIGNMENT
DQc
DQc
DQc
VDDQ
VSS
DQc
DQc
DQc
DQc
VSS
VDDQ
DQc
DQc
VSS
VDD
VDD
VSS
DQd
DQd
VDDQ
VSS
DQd
DQd
DQd
DQd
VSS
VDDQ
DQd
DQd
DQd
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DQb
DQb
DQb
VDDQ
VSS
DQb
DQb
DQb
DQb
VSS
VDDQ
DQb
DQb
VSS
VSS
VDD
VSS
DQa
DQa
VDDQ
VSS
DQa
DQa
DQa
DQa
VSS
VDDQ
DQa
DQa
DQa
TOP VIEW
MCM63Z737
MCM63Z737DMCM63Z819
2
MOTOROLA FAST SRAM




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