MGFC36V3436 반도체 회로 부품 판매점
3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
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 Mitsubishi |
DESCRIPTION
The MGFC36V3436 is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 - 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 4W (TYP.) @ f=3.4 - 3.6 GHz
High power gain
GLP = 12 dB (TYP.) @ f=3.4 - 3.6GHz
High power added efficiency
P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz
Low distortion [item -51]
IM3=-45dBc(Typ.) @Po=25dBm S.C.L.
APPLICATION
item 01 : 3.4 - 3.6 GHz band power amplifier
item 51 : 3.4 - 3.6 GHz band digital ratio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 1.2 (A)
RG=100 (ohm)
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC36V3436
3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
OUTLINE DRAWING
Unit : millimeters
N2
I.
M0
2-
/
+ (2)
9
.
2
1
N
I
M
2
4
.
0
-
/
+6
5
.
.
1
4
2
.
0
21.0 +/-0.3
(1)
0.6 +/-0.15
(2)
R-1.6
3
.
1
1
(3)
10.7
17.0 +/-0.2
12.0
2
.
0
-
/
+
1
.6
0.
2
GF-8
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
VGSO
ID
IGR
IGF
PT
Tch
Tstg
*1 : Tc=25deg.C
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation *1
Channel temperature
Storage temperature
(Ta=25deg.C)
Ratings
-15
-15
3.75
-10
21
25
175
-65 / +175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
gm Transconductance
VDS = 3V , ID = 1.1A
VGS(off)
Gate to source cut-off voltage
VDS = 3V , ID = 10mA
P1dB
Output power at 1dB gain
compression
GLP
Linear power gain
VDS=10V, ID(RF off)=1.2A, f=3.4 - 3.6GHz
ID Drain current
P.A.E.
Power added efficiency
IM3 3rd order IM distortion *1
Rth(ch-c)
Thermal resistance *2
delta Vf method
*1 : item -51,2 tone test,Po=25dBm Single Carrier Level,f=3.6GHz,delta f=5MHz
*2 : Channel-case
MITSUBISHI
ELECTRIC
Limits
Min. Typ. Max.
- - 3.75
-1-
- - -4.5
Unit
A
S
V
35 36
- dBm
11 12 - dB
-
1.1 1.8
A
- 32 - %
-42 -45 - dBc
- 5 6 deg.C/W
18-Sep-'98
TYPICAL CHARACTERISTICS (Ta=25deg.C)
P1dB,GLP vs. f
38
VDS=10(V)
IDS=1.2(A)
P1dB
37
36
35
GLP
34
33
32
3.3
3.4 3.5 3.6
FREQUENCY f(GHz)
17
16
15
14
13
12
11
3.7
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC36V3436
3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
40
VDS=10(V)
38 IDS=1.2(A)
f=3.5(GHz)
36
34
32
30
28
26
24
22
20
10
15
Po,PAE vs. Pin
Po
PAE
20 25 30
INPUT POWER Pin (dBm)
100
90
80
70
60
50
40
30
20
10
0
35
Po,IM3 vs Pin
33
VDS=10(V)
IDS=1.2(A)
31 f=3.6GHz
Delta f=5(MHz)
29
Po
10
0
-10
27 -20
PAE
25 -30
23 -40
21 -50
19
7
-60
9 11 13 15 17 19 21
INPUT POWER Pin(dBm S.C.L.)
S parameters ( Ta=25deg.C , VDS=10(V),IDS=1.2(A) )
S-Parameters (TYP.)
f
(GHz)
3.30
3.35
3.40
3.45
3.50
3.55
3.60
3.65
3.70
Magn.
0.48
0.49
0.49
0.49
0.48
0.46
0.43
0.38
0.36
S11
Angle(deg)
-179
166
159
145
133
126
112
98
88
Magn.
4.148
4.146
4.127
4.111
4.119
4.123
4.079
4.072
4.049
S21
Angle(deg)
29
16
9
-4
-17
-24
-37
-51
-59
Magn.
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
S12
Angle(deg)
-38
-52
-58
-70
-79
-85
-97
-113
-118
MITSUBISHI
ELECTRIC
Magn.
0.28
0.29
0.29
0.30
0.31
0.32
0.33
0.33
0.33
S22
Angle(deg)
-136
-150
-157
-170
178
171
158
145
140
18-Sep-'98
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