MGF431XG 반도체 회로 부품 판매점
Super Low Noise InGaAs HEMT
|
|
 Mitsubishi |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF431xG
Super Low Noise InGaAs HEMT
DESCRIPTION
The MGF431xG series super-low-noise HEMT(High Electron
Mobility Transistor) is designed for use in L to K band amplifiers.
The hermetically sealed metal-ceramic package assures
minimum parasitic losses, and has a configuration suitable for
microstrip circuits.
FEATURES
Low noise figure
@ f=12GHz
MGF4316G : NF min.=0.80dB (MAX.)
MGF4319G : NF min.=0.50dB (MAX.)
High associated gain
Gs=12.0 dB (MIN.)
@ f=12GHz
APPLICATION
L to K band low noise amplifiers.
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
Refer to Bias Procedure
OUTLINE DRAWING
GD-4
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
Symbol
Parameter
Ratings Unit
VGDO Gate to drain voltage
-4 V
VGSO
ID
PT
Tch
Gate to source voltage
Drain current
Total power dissipation
Channel temperature
-4 V
60 mA
50 mW
125 °C
Tstg Storage temperature
-65 ~ +125 °C
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS ( Ta=25°C )
Symbol
Parameter
Test conditions
Limits
Min. Typ.
Max
Unit
V(BR)GDO Gate to drain breakdown voltage IG= -10µA
-3 — — V
IGSS
Gate to source leakage current VGS= -2V, VDS=0V
— — 50 µA
IDSS Saturated drain current
VGS=0V, VDS=2V
15 — 60 mA
VGS (off)
Gate to Source cut-off voltage VDS=2V, ID=500µA
-0.1 — -1.5 V
gm Transconductance
VDS=2V, ID=10mA
— 75 — mS
Gs Associated gain
VDS=2V, ID=10mA, f=12GHz
12 13.5 —
dB
NFmin
Minimum noise figure
VDS=2V, ID=10mA, f=12GHz MGF4316G
MGF4319G
—
—
— 0.8
dB
— 0.5
Rth (ch-a) Thermal resistance
*1 ∆Vf method
— 625 — ˚C/W
*1 : Channel to ambient
MITSUBISHI
ELECTRIC
as of Apr.'98
Typical Characteristics
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF431xG
Super Low Noise InGaAs HEMT
MITSUBISHI
ELECTRIC
as of Apr.'98
|
PDF 파일 내의 페이지 : 총 3 페이지
제조업체: Mitsubishi
( mitsubishi )
MGF431XG data
데이터시트 다운로드 :
[ MGF431XG.PDF ]
[ MGF431XG 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
