MA3Z792D 반도체 회로 부품 판매점
Silicon epitaxial planar type
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 Panasonic |
Schottky Barrier Diodes (SBD)
MA3Z792D
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
0.425
2.1 ± 0.1
1.25 ± 0.1
Unit : mm
0.425
I Features
• Two MA3Z792s diodes (anode common) are contained in the S-
mini type 3-pin package
• Allowing to rectify under (IF(AV) = 100 mA) condition
• Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
• Low VF (forward rise voltage), with high rectification efficiency
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward
current
Single
Double*2
VR
VRRM
IFM
30
30
300
200
V
V
mA
Average forward Single
current
Double*2
IF(AV)
100
70
mA
Non-repetitive peak forward
surge current*1
IFSM
1
A
Junction temperature
Tj 125 °C
Storage temperature
Tstg −55 to +125
°C
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
*2 : Value per chip
1
3
2
1 : Cathode 1
2 : Cathode 2
3 : Anode 1, 2
Flat S-Mini Type Package (3-pin)
Marking Symbol: M3Y
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 30 V
VF IF = 100 mA
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
15
0.55
20
2
µA
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
MA3Z792D
Schottky Barrier Diodes (SBD)
IF VF
103
102 75°C 25°C
10 Ta = 125°C
− 20°C
1
10−1
10−2
0
0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V)
VF Ta
1.0
0.8
0.6
0.4
IF = 100 mA
0.2 10 mA
3 mA
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
IR VR
104
103
Ta = 125°C
102
75°C
10
25°C
1
10−1
0
5 10 15 20 25 30
Reverse voltage VR (V)
Ct VR
24
f = 1 MHz
Ta = 25°C
20
16
12
8
4
0
0 5 10 15 20 25 30
Reverse voltage VR (V)
IR Ta
104
103
VR = 30 V
102 3 V
1V
10
1
10−1
−40 0
40 80 120 160 200
Ambient temperature Ta (°C)
2
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제조업체: Panasonic
( panasonic )
MA3Z792D data
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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Silicon epitaxial planar type - Panasonic
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