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Panasonic |
Schottky Barrier Diodes (SBD)
MA3XD14E
Silicon epitaxial planar type (cathode common)
For high-speed switching circuits
I Features
• Mini type 3-pin package
• Low forward rise voltage VF (VF < 0.4 V)
• Cathode common type
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Non-repetitive peak forward
surge current*2
VR
VRRM
IFSM
20
20
1
V
V
A
Forward current Single
(DC)
Double*1
IF
100 mA
70
Peak forward
Single
IFM
300
mA
current
Double*1
200
Junction temperature
Tj 125 °C
Storage temperature
Tstg −55 to +125
°C
Note) *1 : The value for operating one chip
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
1
3
2
0.1 to 0.3
0.4 ± 0.2
1 : Anode 1
2 : Anode 2
3 : Cathode 1
Cathode 2
Mini Type Package (3-pin)
Marking Symbol: M5H
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 10 V
VF1 IF = 5 mA
VF2 IF = 100 mA
Ct VR = 0 V, f = 1 MHz
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
20
0.27
0.40
25
3.0
µA
V
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
MA3XD14E
Schottky Barrier Diodes (SBD)
IF VF
1
10−1
Ta = 125°C
10−2
10−3
75°C
25°C
10−4
20°C
10−5
10−6
0
0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V)
IR VR
10−1
10−2
10−3
10−4
Ta = 125°C
75°C
10−5 25°C
10−6
0
5 10 15 20 25
Reverse voltage VR (V)
30
2
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