MA133 반도체 회로 부품 판매점
Silicon epitaxial planar type
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 Panasonic |
Switching Diodes
MA3S133
Silicon epitaxial planar type
For switching circuits
1.60 ± 0.1
0.80 0.80 ± 0.05
Unit : mm
I Features
• Super-small SS-mini type package contained two elements, allow-
ing high-density mounting
• Two diodes are connected in series in the package
1
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Forward current
(DC)
Single
Series
VR
VRM
IF
80
80
100
65
Peak forward
current
Single
Series
IFM
200
130
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Unit
V
V
mA
mA
°C
°C
0.44 0.44
+ 0.05
0.88 − 0.03
1 : Anode 1
2 : Cathode 2
3 : Cathode 1
Anode 2
SS-Mini Type Package (3-pin)
Marking Symbol: MP
Internal Connection
1
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*3
IR VR = 75 V
VF IF = 100 mA
VR IR = 100 µA
Ct*1 VR = 0 V, f = 1 MHz
Ct*2 VR = 0 V, f = 1 MHz
trr*1 IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
trr*2 IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
80
150
9
Note) 1. Rated input/output frequency: 100 MHz
2. *1 : Between pins 2 and 3
*2 : Between pins 1 and 3
*3 : trr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
3
Max
100
1.2
5.5
3.0
Unit
nA
V
V
pF
pF
ns
ns
1
MA3S133
Switching Diodes
1 000
100
IF VF
Between pins 1 and 3
10
1 Ta = 150°C
100°C
25°C
0.1 − 20°C
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
10 000
1 000
IF VF
Between pins 2 and 3
100 Ta = 150°C
100°C
25°C
10 − 20°C
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V)
1 000
100
10
1
0.1
IR VR
Between pins 2 and 3
Between pins 1 and 3
Ta = 150°C
100°C
Ta = 150°C
100°C
25°C
25°C
0.01
0
20 40 60 80 100 120
Reverse voltage VR (V)
VF Ta
1.6
Between pins 1 and 3
1.4
1.2
1.0 IF = 100 mA
0.8
0.6 10 mA
3 mA
0.4
0.2
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
VF Ta
1.6
Between pins 2 and 3
1.4
1.2
1.0 IF = 100 mA
0.8
10 mA
0.6 3 mA
0.4
0.2
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
1 000
100
IR Ta
Between pins 2 and 3
Between pins 1 and 3
10 VR = 75 V
35 V
1
VR = 75 V
35 V
0.1
6V
6V
0.01
−40 0 40 80 120 160 200
Ambient temperature Ta (°C)
Ct VR
6.0
f = 1 MHz
Ta = 25°C
5.0
4.0
3.0
2.0
1.0
Between pins 2 and 3
Between pins 1 and 3
0
0 20 40 60 80 100 120
Reverse voltage VR (V)
1 000
300
100
IF(surge) tW
Ta = 25°C
IF(surge)
tW
Non repetitive
30
10 Between pins 2 and 3
3
Between pins 1 and 3
1
0.3
0.1
0.03
0.1 0.3 1 3 10
Pulse width tW (ms)
30
2
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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