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HYR183240G-845 반도체 회로 부품 판매점

Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs)



Infineon 로고
Infineon
HYR183240G-845 데이터시트, 핀배열, 회로
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
Direct RDRAM RIMM Modules
(with 288 Mbit RDRAMs)
Overview
The Direct RambusRIMMmodule is a general purpose high-performance memory subsystem
suitable for use in a broad range of applications including computer memory, personal computers,
workstations, and other applications where high bandwidth and low latency are required.
The Direct Rambus RIMM module consists of 288 Mbit Direct Rambus DRAM (Direct RDRAM)
devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The
use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while
using conventional system and board design technologies. Direct RDRAM devices are capable of
sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed, memory transactions. The separate control and data buses with independent
row and column control yield over 95% bus efficiency. The RDRAM's 32-bank architecture supports
up to four simultaneous transactions per device.
Form Factor
The Rambus RIMM modules are offered in a 184-pad 1 mm edge connector pad pitch form factor
suitable for 184 contact RIMM connectors. The RIMM module is suitable for desktop and other
system applications. The next figure shows an eight device Rambus RIMM module without heat
spreader.
Features
High speed 800, 711 & 600 MHz RDRAM
storage
184 edge connector pads with 1 mm pad
spacing
Maximum module PCB size:
133.5 mm × 31.75 mm × 1.37 mm
(5.25× 1.25× 0.05)
Each RDRAM has 32 banks, for a total of
512, 256, ,128 or 64 banks on each 512/
576 MB, 256/288MB,128/144 or 64/72 MB
module respectively.
Gold plated edge connector pad contacts
Serial Presence Detect (SPD) support
Operates from a 2.5 V supply (± 5%)
Low power and powerdown self refresh
modes
Separate Row and Column buses for higher
efficiency
INFINEON Technologies
Fig.1 : Rambus RIMM module
(without heat spreader)
1 7.01


HYR183240G-845 데이터시트, 핀배열, 회로
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
Part Number Designators
Organization Capacity I/O Frequency
[MHz]
64 MB/ 72 MB
32 MB × 16
64 MB
600
32 MB × 16
64 MB
711
32 MB × 16
64 MB
800
32 MB × 16
64 MB
800
32 MB × 18
72 MB
600
32 MB × 18
72 MB
711
32 MB × 18
72 MB
800
32 MB × 18
72 MB
800
128 MB/144 MB
64 MB × 16
128 MB 600
64 MB × 16
128 MB 711
64 MB × 16
128 MB 800
64 MB × 16
128 MB 800
64 MB × 18
144 MB 600
64 MB × 18
144 MB 711
64 MB × 18
144 MB 800
64 MB × 18
144 MB 800
256 MB/288 MB
128 MB × 16
256 MB 600
128 MB × 16
256 MB 711
128 MB × 16
256 MB 800
128 MB × 16
256 MB 800
128 MB × 18
288 MB 600
128 MB × 18
288 MB 711
128 MB × 18
288 MB 800
128 MB × 18
288 MB 800
512 MB/576 MB
256 MB × 16
512 MB 600
256 MB × 16
512 MB 711
256 MB × 16
512 MB 800
256 MB × 16
512 MB 800
256 MB × 18
576 MB 600
256 MB × 18
576 MB 711
256 MB × 18
576 MB 800
256 MB × 18
576 MB 800
Part Designator
HYR163240G-653
HYR163240G-745
HYR163240G-845
HYR163240G-840
HYR183240G-653
HYR183240G-745
HYR183240G-845
HYR183240G-840
HYR166440G-653
HYR166440G-745
HYR166440G-845
HYR166440G-840
HYR186440G-653
HYR186440G-745
HYR186440G-845
HYR186440G-840
HYR1612840G-653
HYR1612840G-745
HYR1612840G-845
HYR1612840G-840
HYR1812840G-653
HYR1812840G-745
HYR1812840G-845
HYR1812840G-840
HYR1625640G-653
HYR1625640G-745
HYR1625640G-845
HYR1625640G-840
HYR1825640G-653
HYR1825640G-745
HYR1825640G-845
HYR1825640G-840
# of RDRAM
RDRAMs Density
2 288 Mbit
2
2
2
2
2
2
2
4 288 Mbit
4
4
4
4
4
4
4
8 288 Mbit
8
8
8
8
8
8
8
16 288 Mbit
16
16
16
16
16
16
16
INFINEON Technologies
2
7.01




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HYR183240G-840

Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) - Infineon



HYR183240G-845

Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) - Infineon