BTS721L1 반도체 회로 부품 판매점
Smart Four Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)
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 Siemens Semiconductor Group |
PROFET® BTS721L1
Smart Four Channel Highside Power Switch
Features
• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection
(including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage Protection
Operating voltage
active channels:
On-state resistance RON
Nominal load current IL(NOM)
Current limitation IL(SCr)
Vbb(AZ)
Vbb(on)
43 V
5.0 ... 34 V
one two parallel four parallel
100 50
25 mΩ
2.9 4.3 6.3 A
8 8 8A
Application
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
5
7
9
18
17
14
13
4
8
2
6
Symbol
Vbb
IN1
IN2
IN3
IN4
OUT1
OUT2
OUT3
OUT4
ST1/2
ST3/4
GND1/2
GND3/4
Function
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 4 and also for low
thermal resistance
Input 1 .. 4, activates channel 1 .. 4 in case of
logic high signal
Output 1 .. 4, protected high-side power output
of channel 1 .. 4. Design the wiring for the
max. short circuit current
Diagnostic feedback 1/2 of channel 1 and
channel 2, open drain, low on failure
Diagnostic feedback 3/4 of channel 3 and
channel 4, open drain, low on failure
Ground 1/2 of chip 1 (channel 1 and channel 2)
Ground 3/4 of chip 2 (channel 3 and channel 4)
Pin configuration (top view)
Vbb
GND1/2
IN1
ST1/2
IN2
GND3/4
IN3
ST3/4
IN4
Vbb
1•
2
3
4
5
6
7
8
9
10
20 Vbb
19 Vbb
18 OUT1
17 OUT2
16 Vbb
15 Vbb
14 OUT3
13 OUT4
12 Vbb
11 Vbb
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
06.96
Block diagram
Four Channels; Open Load detection in on state;
BTS721L1
3 IN1
5 IN2
4 ST1/2
ESD
Voltage
source
V Logic
Voltage
sensor
Logic
Overvoltage Current
protection
limit 1
Gate 1
protection
+ V bb
Channel 1
Level shifter
Rectifier 1
Charge
pump 1
Charge
pump 2
Limit for
unclamped
ind. loads 1
Open load
Short to Vbb
detection 1
Temperature
sensor 1
Current Gate 2
limit 2 protection
OUT1
Channel 2
2 GND1/2
Signal GND
Chip 1
Chip 1
Level shifter
Rectifier 2
Limit for
unclamped
ind. loads 2
Open load
Short to Vbb
detection 2
OUT2
Temperature
sensor 2
RO1
R O2
GND1/2
+ V bb
Channel 3
7 IN3
9 IN4
8 ST3/4
Logic and protection circuit of chip 2
(equivalent to chip 1)
OUT3
Channel 4
6 GND3/4
Signal GND
Chip 2
PROFET®
Chip 2
Leadframe connected to pin 1, 10, 11, 12, 15, 16, 19, 20
OUT4
RO3
R O4
GND3/4
Leadframe
18
17
Load
Load GND
Leadframe
14
13
Load
Load GND
Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter
Symbol
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
Tj,start = -40 ...+150°C
Vbb
Vbb
Values Unit
43 V
34 V
Semiconductor Group
2
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제조업체: Siemens Semiconductor Group
( siemens )
BTS721L1 data
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[ BTS721L1.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
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Smart Four Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown) - Siemens Semiconductor Group
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