BTS611L1E3128A 반도체 회로 부품 판매점
Smart Two Channel Highside Power Switch
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 Infineon Technologies AG |
PROFET® BTS611L1
Smart Two Channel Highside Power Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection Vbb(AZ)
43 V
Operating voltage
Vbb(on) 5.0 ... 34 V
channels:
each
both
parallel
On-state resistance RON
Load current (ISO) IL(ISO)
Current limitation IL(SCr)
200 100 mΩ
2.3 4.4 A
4 4A
TO-220AB/7
Application
• µC compatible power switch with diagnostic
feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve
1
Standard
loads
• Replaces electromechanical relays, fuses and discrete circuits
77
1
Straight leads
7
SM1D
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
3 IN1
6 IN2
ESD
5 ST
Voltage
source
V Logic
Voltage
sensor
Logic
PROFET
Overvoltage
protection
Current
limit 1
Gate 1
protection
+ V bb
4
Level shifter
Rectifier 1
Charge
pump 1
Charge
pump 2
Limit for
unclamped
ind. loads 1
Open load
Short to Vbb
detection 1
Temperature
sensor 1
Current
limit 2
Gate 2
protection
OUT1
1
Level shifter
Rectifier 2
Limit for
unclamped
ind. loads 2
GND
2 Signal GND
Open load
Short to Vbb
detection 2
Temperature
sensor 2
OUT2
7
R O1
R O2
GND
Load
Load GND
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1 of 15
2003-Oct-01
PROFET® BTS611L1
Pin Symbol
Function
1 OUT1 (Load, L) Output 1, protected high-side power output of channel 1
2 GND
Logic ground
3 IN1
Input 1, activates channel 1 in case of logical high signal
4 Vbb
5 ST
Positive power supply voltage,
the tab is shorted to this pin
Diagnostic feedback: open drain, low on failure
6 IN2
Input 2, activates channel 2 in case of logical high signal
7 OUT2 (Load, L) Output 2, protected high-side power output of channel 2
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Supply voltage (overvoltage protection see page 4)
Vbb
Supply voltage for full short circuit protection
Tj Start=-40 ...+150°C
Vbb
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad dump4)
RI3)= 2 Ω, RL= 5.3 Ω, td= 200 ms, IN= low or high
Load current (Short circuit current, see page 5)
IL
Operating temperature range
Tj
Storage temperature range
Tstg
Power dissipation (DC), TC ≤ 25 °C
Ptot
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.
one channel, IL = 2.3 A, ZL = 89 mH, 0 Ω:
both channels parallel, IL = 4.4 A, ZL = 47 mH, 0 Ω:
see diagrams on page 9
EAS
Electrostatic discharge capability (ESD)
IN: VESD
(Human Body Model)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
VIN
IIN
IST
Values Unit
43 V
34 V
60 V
self-limited
-40 ...+150
-55 ...+150
36
A
°C
W
290 mJ
580
1.0 kV
2.0
-10 ... +16
±2.0
±5.0
V
mA
2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3) RI = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Semiconductor Group
2
2003-Oct-01
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