Q60215-Y67 반도체 회로 부품 판매점
Silizium-Fotoelement Silicon Photovoltaic Cell
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 Siemens Semiconductor Group |
Silizium-Fotoelement
Silicon Photovoltaic Cell
BPY 64 P
BPY 64 P
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q Speziell geeignet für Anwendungen im
Bereich von 420 nm bis 1060 nm
q Kathode = Chipunterseite
q Mit feuchtigkeitsabweisender Schutzschicht
überzogen
q Weiter Temperaturbereich
Anwendungen
q für Meβ-, Steuer- und Regelzwecke
q zur Abtastung von Lichtimpulsen
q quantitative Lichtmessung im sichtbaren
Licht- und nahen Infrarotbereich
Features
q Especially suitable for applications from
420 nm to 1060 nm
q Cathode = back contact
q Coated with a humidity-proof protective
layer
q Wide temperature range
Applications
q For control and drive circuits
q Light pulse scanning
q Quantitative light measurements in the
visible light and near infrared range
Typ
Type
BPY 64 P
Bestellnummer
Ordering Code
Q60215-Y67
Semiconductor Group
197
10.95
BPY 64 P
Grenzwerte
Maximum Ratings
Bezeichnung
Description
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Symbol
Symbol
Top; Tstg
VR
Wert
Value
− 55 ... + 100
Einheit
Unit
°C
1V
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K)
Bezeichnung
Description
Fotoempfindlichkeit, VR = 0 V
Spectral sensitivity
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S = 10 % von Smax
Spectral range of sensitivity
S = 10 % of Smax
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessungen der
bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area
Halbwinkel
Half angle
Dunkelstrom, VR = 1 V; E = 0
Dark current
Spektrale Fotoempfindlichkeit, λ = 850 nm
Spectral sensitivity
Quantenausbeute, λ = 850 nm
Quantum yield
Leerlaufspannung, Ev = 1000 Ix
Open-circuit voltage
Kurzschluβstrom, Ev = 1000 Ix
Short-circuit current
Symbol
Symbol
S
λS max
λ
A
L×B
L×W
ϕ
IR
Sλ
η
VO
ISC
Wert
Value
0.25 ( 0.18)
Einheit
Unit
µA/Ix
850 nm
420 ... 1060 nm
0.36
5.98 × 5.98
cm2
mm
± 60
4 (≤ 80)
Grad
deg.
µA
0.50 A/W
0.72
450 (≥ 280)
Electrons
Photon
mV
0.25 (≥ 0.18) mA
Semiconductor Group
198
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( siemens )
Q60215-Y67 data
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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