RA30H4452M-E01 반도체 회로 부품 판매점
440-520MHz 30W 12.5V MOBILE RADIO
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 Mitsubishi Electric Semiconductor |
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA30H4452M
440-520MHz 30W 12.5V MOBILE RADIO
DESCRIPTION
The RA30H4452M is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 440- to
520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
1
3
4
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA30H4452M-E01
RA30H4452M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA30H4452M
MITSUBISHI ELECTRIC
1/9
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA30H4452M
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG Gate Voltage
Pin Input Power
Pout Output Power
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
Above Parameters are guaranteed independently
VGG<5V
VDD<12.5V, Pin=0mW
f=440-520MHz,
ZG=ZL=50Ω
RATING
17
6
100
45
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f Frequency Range
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
VDD=12.5V,
VGG=5V,
Pin=50mW
IGG Gate Current
— Stability
VDD=10.0-15.2V, Pin=25-70mW,
Pout<40W (VGG control), Load VSWR=3:1
—
Load VSWR Tolerance
VDD=15.2V, Pin=50mW, Pout=30W (VGG control),
Load VSWR=20:1
440 520
30
40
-25
3:1
1
No parasitic oscillation
MHz
W
%
dBc
—
mA
—
No degradation or destroy —
All Parameters, Conditions, Ratings and Limits are subject to change without notice
RA30H4452M
MITSUBISHI ELECTRIC
2/9
2 Dec 2002
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제조업체: Mitsubishi Electric Semiconductor
( mitsubishi )
RA30H4452M-E01 data
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[ RA30H4452M-E01.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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