TGC1439A-EPU 반도체 회로 부품 판매점
18 - 20 GHz 5-Bit Phase Shifter
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 TriQuint Semiconductor |
Advance Product Information
May 3, 2000
18 - 20 GHz 5-Bit Phase Shifter
TGC1439A-EPU
The TriQuint TGC1439A-EPU is a 5-Bit Digital Phase
Shifter MMIC design using TriQuint’s proven 0.5 µm
Power pHEMT process to support a variety of K-Band
phased array applications including satellite
communication systems.
Key Features and Performance
• 0.5um pHEMT Technology
• 18-20 GHz Frequency Range
• 3º Typical RMS Phase Shift Error
• -5 dB Typical Insertion Loss
• Control Voltage: -2.5 V to -5.0 V
• Compact 1.27 mm2 Die Area
Primary Applications
• Phased Arrays
• Satellite Communication Systems
The 5-bit design utilizes a compact topology that
achieves a 1.27 mm2 die area, high performance and
good tolerance to control voltage variation
The TGC1439A provides a 5-Bit digital phase shift
function with a nominal -5 dB insertion loss and 3º
RMS phase shift error over a bandwidth of 18-20 GHz.
The TGC1439A requires a minimum of off-chip
components and operates with a -5.0 V to -2.5 V
control voltage range. Each device is RF tested on-
wafer to ensure performance compliance. The device
is available in chip form.
TGC1439A Typical RF Performance (Fixtured)
12
9
6
3
0
-3
-6
-9
-12
0
18 GHz
19 GHz
20 GHz
48
12 16 20 24 28
Phase State
TGC1439A Typical RF Performance (Fixtured)
-3
-4 Insertion Loss
40
35
-5 30
-6 25
-7 20
-8 15
-9 10
-10 5
-11 0
-12
Phase Error
-5
-13 -10
17 18 19 20 21
Frequency (GHz)
TGC1439A Typical RF Performance (Fixtured)
0
-2
Input
Output
-4
-6
-8
-10
-12
-14
-16
-18
-20
17 18 19 20 21
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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Advance Product Information
May 3, 2000
Electrical Characteristics
RECOMMENDED MAXIMUM RATINGS
TGC1439A
Symbol
V-
I+
PD
PIN
TCH
TM
TSTG
Parameter
Control Voltage
Control Current
Power Dissipation
Input Continuous Wave Power
Operating Channel Temperature
Mounting Temperature (30 seconds)
Storage Temperature
Value
-8 V
1 mA
0.1 W
20 dBm
150 °C
320 °C
-65 °C to 150 °C
Notes
3/
1/, 2/
1/ These ratings apply to each individual FET
2/ Junction operating temperature will directly affect the device mean time to failure
(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.
3/ Total current for the entire MMIC
ON-WAFER RF PROBE CHARACTERISTICS
(TA = 25 °C ± 5°C)
Symbol
IL
IRL
ORL
PS
Parameter
Insertion Loss
Input Return
Loss
Output Return
Loss
Phase Shift
Test Condition
Vctnl=0V / -2.5V
F = 18, 19, 20 GHz
States 0 and 31
F = 18, 19, 20 GHz
States 0 and 31
F = 18, 19, 20 GHz
States 0 and 31
F = 18, 19, 20 GHz
State 31
Limit
Min Nom Max
-5.5 -4.6 -4.0
-16 -11
-14 -11
342 344 350
Units
dB
dB
dB
deg
1200
1000
800
600
400
200
0
-5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0
19 GHz Reference State Insertion Loss (dB)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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