TIPP117 반도체 회로 부품 판매점
PNP SILICON POWER DARLINGTONS
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 Power Innovations Limited |
Copyright © 1997, Power Innovations Limited, UK
q 20 W Pulsed Power Dissipation
q 100 V Capability
q 2 A Continuous Collector Current
q 4 A Peak Collector Current
TIPP115, TIPP116, TIPP117
PNP SILICON POWER DARLINGTONS
MAY 1989 - REVISED MARCH 1997
LP PACKAGE
(TOP VIEW)
E
1
C2
3
B
MDTRAB
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Pulsed power dissipation (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. VCE = 20 V, IC = 1 A, PW = 10 ms, duty cycle ≤ 2%.
TIPP115
TIPP116
TIPP117
TIPP115
TIPP116
TIPP117
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
PT
Tj
Tstg
TL
VALUE
-60
-80
-100
-60
-80
-100
-5
-2
-4
-50
0.8
20
-55 to +150
-55 to +150
260
UNIT
V
V
V
A
A
mA
W
W
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TIPP115, TIPP116, TIPP117
PNP SILICON POWER DARLINGTONS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector-base
cut-off current
IEBO
hFE
VCE(sat)
VBE
VEC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IC = -10 mA
(see Note 4)
VCE = -30 V
VCE = -40 V
VCE = -50 V
VCE = -60 V
VCE = -80 V
VCE = -100 V
VEB = -5 V
VCE = -4 V
VCE = -4 V
IB = -8 mA
VCE = -4 V
IE = -4 A
IB = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IB = 0
IC = 0
IC = -1 A
IC = -2 A
IC = -2 A
IC = -2 A
IB = 0
TIPP115
TIPP116
TIPP117
TIPP115
TIPP116
TIPP117
TIPP115
TIPP116
TIPP117
-60
-80
-100
(see Notes 4 and 5)
(see Notes 4 and 5)
1000
500
(see Notes 4 and 5)
(see Notes 4 and 5)
-2
-2
-2
-1
-1
-1
-2
-2.5
-2.8
-3.5
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
PRODUCT INFORMATION
2
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TIPP117 data
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