IR53HD420-P2 반도체 회로 부품 판매점
SELF-OSCILLATING HALF BRIDGE
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 International Rectifier |
Preliminary Data Sheet No. PD60140J
IR53H(D)420(-P2)
SELF-OSCILLATING HALF BRIDGE
Features
• Output power MOSFETs in half-bridge configuration
• High side gate drive designed for bootstrap operation
• Bootstrap diode integrated into package (HD type)
• Tighter initial deadtime control
• Low temperature coefficient deadtime
• 15.6V zener clamped Vcc for offline operation
• Half-bridge output is out of phase with RT
• True micropower startup
• Shutdown feature (1/6th VCC) on CT lead
• Increased undervoltage lockout hysteresis (1Volt)
• Lower power level-shifting circuit
• Lower di/dt gate drive for better noise immunity
• Excellent latch immunity on all inputs and outputs
• ESD protection on all leads
• Constant VO pulse width at startup
• Heatsink package version (P2 type)
Product Summary
VIN (max)
500V
Duty Cycle
Deadtime (type.)
50%
1.2µs
Rds(on)
3.0Ω
PD (TA = 25oC) 2.0W or 3.0W
Package
Description
The IR53H(D)420(-P2) are complete high voltage, high speed,
self-oscillating half-bridge circuits. Proprietary HVIC and latch
immune CMOS technologies, along with the HEXFET® power
MOSFET technology, enable ruggedized single package con-
struction. The front-end features a programmable oscillator
which functions similar to the CMOS 555 timer. The supply to
the control circuit has a zener clamp to simplify offline opera-
tion. The output features two HEXFETs in a half-bridge con-
figuration with an internally set deadtime designed for mini-
mum cross-conduction in the half-bridge. Propagation delays
Typical Connection
VIN
HV DC Bus
IR53H(D)420(-P2)
D1
COM
1 Vcc
VB 6
2
RT
9
VIN
RT
3 CT
VO 7
CT
4 COM
7 Pin Lead SIP
for the high and low side power MOSFETs
are matched to simplify use in 50% duty
cycle applications. The device can oper-
ate up to the VIN (max) rating.
External
Fast recovery diode D1 is not
required for HD type
TO,
LOAD
IR53H(D)420(-P2)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All volt-
age parameters are absolute voltages referenced to COM, unless stated otherwise. All currents are defined
positive into any lead. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions.
Symbol
VIN
VB
VO
VRT
VCT
Icc
IRT
dV/dt
PD
RthJA
RthJC
TJ
TS
TL
Definition
High voltage supply
High side floating supply
Half-bridge output
RT voltage
CT voltage
Supply current (note 1)
RT output current
Peak diode recovery
Package power dissipation @ TA ≤ +25°C
Thermal resistance, junction to ambient
Thermal resistance, junction to case
(heatsink)
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
-P2
-P2
-P2
Minimum
- 0.3
Vo - 0.3
-0.3
- 0.3
- 0.3
—
-5
—
—
—
—
—
—
Maximum
500
Vo + 25
VIN + 0.3
Vcc + 0.3
Vcc + 0.3
25
5
3.50
2
3
60
40
20
-55 150
-55 150
— 300
Units
V
mA
V/ns
W
oC/W
°C
NOTE 1:
This IC contains a zener clamp structure between VCC and COM which has a nominal breakdown voltage of 15.6V.
Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP
specified in the Electrical Characteristics Section
2
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