IR51HD320 반도체 회로 부품 판매점
SELF-OSCILLATING HALF-BRIDGE
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Data Sheet No. PD-6.067B
IR51HD320
SELF-OSCILLATING HALF-BRIDGE
Features
n Output Power MOSFETs in half-bridge configuration
400V Rated Breakdown Voltage
n High side gate drive designed for bootstrap operation
n Bootstrap diode integrated into package
n Accurate timing control for both Power MOSFETs
Matched delay to get 50% duty cycle
n Matched deadtime of 1.2us
Internal oscillator with programmable frequency
f= 1
1. 4 × (RT + 75Ω) × CT
n Zener clamped Vcc for offline operation
n Half-bridge output is out of phase with RT
Product Summary
VIN (max)
Duty Cycle
Deadtime
RDS(on)
PD (TA = 25 ºC)
Description
Package
The IR51HD320 is a high voltage, high speed, self-
oscillating half-bridge. Proprietary HVIC and latch
immune CMOS technologies, along with the
HEXFET® power MOSFET technology, enable
ruggedized single package construction. The front-end
features a programmable oscillator which functions
similar to the CMOS 555 timer. The supply to the
control circuit has a zener clamp to simplify offline
operation. The output features two HEXFETs in a
half-bridge configuration with an internally set
deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and
low side power MOSFETs are matched to simplify use
in 50% duty cycle applications. The device can
operate up to 400 volts.
IR51HD320
9506
400V
50%
1.2µs
1.8Ω
2.0W
Typical Connection
U P TO 400V D C BU S
V IN
IR 5 1 H D 3 2 0
1
V
CC
V
B
6
COM
RT
CT
2
R
T
V IN
9
3
C
T
7
VO
4
COM
TO LO AD
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IR51HD320
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead.
The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
conditions.
Symbol
VIN
VB
VO
VRT
VCT
ICC
IRT
dv/dt
PD
RθJA
TJ
TS
TL
Parameter
Definition
High Voltage Supply
High Side Floating Supply Absolute Voltage
Half-Bridge Output Voltage
RT Voltage
CT Voltage
Supply Current (Note 1)
RT Output Current
Peak Diode Recovery dv/dt
Package Power Dissipation @ TA ≤ +25ºC
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Min.
-0.3
-0.3
-0.3
-0.3
-0.3
---
-5
---
---
---
-55
-55
---
Max.
400
425
VIN + 0.3
VCC + 0.3
VCC + 0.3
25
5
4.0
2.00
60
150
150
300
Units
V
mA
V/ns
W
ºC/W
ºC
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used
within the recommended conditions.
Symbol
VB
VIN
VO
ID
ICC
TA
Parameter
Definition
High Side Floating Supply Absolute Voltage
High Voltage Supply
Half-Bridge Output Voltage
Continuous Drain Current (TA = 25ºC)
Supply Current (Note 1)
(TA = 85ºC)
Ambient Temperature
Min.
VO + 10
---
-5
---
---
---
-40
Max.
VO + VCLAMP
400
400
0.9
0.6
5
125
Units
V
A
mA
ºC
Note 1:
Because of the IR51HD320's application specificity toward off-line supply systems, this IC contains a
zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of
15.6V. Therefore, the IC supply voltage is normally derived by current feeding the VCC lead
(typically by means of a high value resistor connected between the chip VCC and the rectified line
voltage and a local decoupling capacitor from VCC to COM) and allowing the internal zener clamp
circuit to determine the nominal supply voltage. Therefore, this circuit should not be driven by a DC,
low impedance power source of greater than VCLAMP.
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