SGS5N150 반도체 회로 부품 판매점
General Description
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 Fairchild Semiconductor |
SGS5N150UF
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
SGS5N150UF is designed for the Switching Power
Supply applications.
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A
• High Input Impedance
Application
Switching Power Supply - High Input Voltage Off-line Converter
GC E
TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
SGS5N150UF
1500
± 20
10
5
20
50
20
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Typ.
--
--
Max.
2.5
62.5
Units
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
SGS5N150UF Rev. B
Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 5mA, VCE = VGE
IC = 5A, VGE = 10V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 10V, VGE = 0V,
f = 1MHz
VCC = 600 V
IC = 5A
RG =10Ω
VGE = 10V
Inductive Load
TC = 25°C
VCE = 600 V, IC = 5A
VGE = 10V
Min. Typ. Max. Units
1500
--
--
-- -- V
-- 1.0 mA
-- ± 100 nA
2.0 3.0 4.0
-- 4.7 5.5
V
V
-- 780 --
-- 130 --
-- 70 --
pF
pF
pF
-- 10 -- ns
-- 15 -- ns
-- 30 50 ns
--
70 120
ns
-- 190 --
uJ
-- 100 --
uJ
-- 290 580 uJ
-- 30 45 nC
-- 3 5 nC
-- 15 25 nC
©2003 Fairchild Semiconductor Corporation
SGS5N150UF Rev. B
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
SGS5N150
General Description - Fairchild Semiconductor
SGS5N150UF
General Description - Fairchild Semiconductor