JFTJ105 반도체 회로 부품 판매점
N-Channel Switch
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 Fairchild Semiconductor |
Discrete POWER & Signal
Technologies
J105
J106
J107
G
SD
TO-92
JFTJ105
G
SOT-223
G
S
D
N-Channel Switch
This device is designed for analog or digital switching applications where
very low On Resistance is mandatory. Sourced from Process 59.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VDG
VGS
IGF
TJ, Tstg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
- 25
10
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
J105 / J106 / J107
350
2.8
125
357
Units
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
©1997 Fairchild Semiconductor Corporation
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
N-Channel Switch
(continued)
Min Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
IGSS Gate Reverse Current
VGS(off)
Gate-Source Cutoff Voltage
IG = - 10 µA, VDS = 0
VGS = - 15 V, VDS = 0
VGS = - 15 V, VDS = 0, TA = 100°C
VDS = 15 V, ID = 10 nA
J105
J106
J107
- 25
- 4.5
- 2.0
- 0.5
- 3.0
- 200
- 10
- 6.0
- 4.5
V
nA
nA
V
V
V
ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current*
rDS(on)
Drain-Source On Resistance
VDS = 15 V, IGS = 0
VDS ≤ 0.1 V, VGS = 0
J105 500
mA
J106 200
mA
J107 100
mA
J105
3.0 Ω
J106
J107
6.0 Ω
8.0 Ω
SMALL SIGNAL CHARACTERISTICS
Cdg(on)
Csg(on)
Cdg(off)
Csg(off)
Drain Gate & Source Gate On
Capacitance
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VDS = 0, VGS = 10 V, f = 1.0 MHz
VDS = 0, VGS = 10 V, f = 1.0 MHz
VDS = 0, VGS = 10 V, f = 1.0 MHz
160 pF
35 pF
35 pF
Typical Characteristics
Common Drain-Source
Characteristics
200
V =0 V
GS
-1V
150
-2V
100
-3V
50
0
0
-4V
T = + 25 C0
A
-5V
TYP V
= -5V
GS(OFF)
0.5 1 1.5
VDS - DRAIN-SOURCE VOLTAGE(V)
2
Common Drain-Source
Characteristics
50
V =0V
GS
40
- 0.1V
0
T = + 25 C
A
TYP V
= -0.7V
GS(OFF)
30
20
10
0
0
- 0.2V
- 0.3V
-0.4V
- 0.5V
12 34
V - DRAIN-SOURCE VOLTAGE(V)
DS
5
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