JANTX4N47 반도체 회로 부품 판매점
JAN/ JANTX/ JANTXV/ SINGLE CHANNEL OPTOCOUPLERS
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 Micropac Industries |
4N47
4N48
4N49
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
Mii
OPTOELECTRONIC
PRODUCTS{PRIVATE }
DIVISION
Features:
• High Reliability
• Base lead provided for conventional transistor
biasing
• Rugged package
• High gain, high voltage transistor
• +1kV electrical isolation
Applications:
• Eliminate ground loops
• Level shifting
• Line receiver
• Switching power supplies
• Motor control
DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically
sealed TO-5 metal can. The 4N47, 4N48 and 4N49’s can be tested to customer specifications, as well as to MIL-PRF-19500
JAN, JANTX, JANTXV and JANS quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage............................................................................................................................................................. 1kV
Emitter-Collector Voltage............................................................................................................................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ............................40V
Collector-Base Voltage .............................................................................................................................................................45V
Reverse Input Voltage ...............................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ......................................40mA
Peak Forward Input Current (Value applies for tw < 1µs, PRR < 300 pps) ...............................................................................1A
Continuous Collector Current ................................................................................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ..................................300mW
Storage Temperature........................................................................................................................................... -65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................. -55°C to +125°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ................................................................................ 240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.
*JEDEC registered data
Package Dimensions
Schematic Diagram
0.305 [7.75]
0.335 [8.51]
0.040 [1.02]
MAX.
6 LEADS
0.016Ø [0.41]
0.019Ø[0.48]
0.022Ø [5.08]
56
37
2
1
0.500 [12.70]
MIN.
0.155 [3.94]
0.185 [4.70]
45°
0.034 [0.864]
0.028 [0.711]
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
0.045 [1.14]
0.029 [0.73]
5A
7K
C3
E1
B2
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
3 - 14
4N47, 4N48, and 4N49
JAN, JANTX, JANTXV, JANS, SINGLE CHANNEL OPTOCOUPLERS
*ELECTRICAL CHARACTERISTICS TA = 25°C Unless otherwise specified
PARAMETER
SYMBOL MIN TYP MAX
Input Diode Static Reverse Current
IR
Input Diode Static Forward Voltage
-55°C
1.0
+25°C
+100°C
VF
0.8
0.7
*OUTPUT TRANSISTOR TA = 25°C Unless otherwise specified
PARAMETER
SYMBOL MIN
1.4
TYP
100
1.7
1.5
1.3
MAX
Collector-Base Breakdown Voltage
V(BR)CBO
45
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
UNITS
µA
V
UNITS
V
V
TEST CONDITIONS
VR = 2V
IE = 10mA
TEST CONDITIONS
IC = 100µA, IB = 0, IF = 0
IC = 1mA, IB = 0, IF = 0
NOTE
NOTE
Emitter-Collector Breakdown Voltage
V(BR)EBO
7
V IC = 0, IE = 100µA, IF = 0
*COUPLED CHARACTERISTICS
PARAMETER
TA = 25°C Unless otherwise specified
SYMBOL MIN TYP MAX UNITS
TEST CONDITIONS
NOTE
On State Collector Current
4N47
4N48
4N49
IC(ON)
0.5
1.0
2.0
mA
5
10
VCE = 5V, IB = 0, IF = 1mA
On State Collector Current
-55°C
4N47
4N48
4N49
IC(ON)
0.7
1.4
2.8
mA
VCE = 5V, IB = 0, IF = 2mA
On State Collector Current
+100°C
4N47
4N48
4N49
IC(ON)
0.5
1.0
2.0
mA
VCE = 5V, IB = 0, IF = 2mA
2
Off State Collector Current +25°C
IC(OFF)
100 nA
VCE = 20V, IB = 0, IF = 0mA
Off State Collector Current +100°C
IC(OFF)
100 µA
VCE = 20V, IB = 0, IF = 0mA
Collector-Emitter Saturation Voltage
Input to Output Resistance
4N47
4N48
4N49
VCE(SAT)
VCE(SAT)
VCE(SAT)
RI-O
1011
0.3 V
0.3 V
0.3 V
IC = 0.5mA, IB = 0, IF = 2mA
IC = 1mA, IB = 0, IF = 2mA
IC = 2mA, IB = 0, IF = 2mA
VIN-OUT = 1kV
1
Input to Output Capacitance
CI-O
5 pF
f = 1MHz, VIN-OUT = 1kV
1
Rise Time/ Fall Time
Phototransistor Operation
4N47
4N48
4N49
tr / tf
tr / tf
tr / tf
20 µs
25 µs VCC = 10V, IF = 10mA, RL = 100Ω
25 µs
Rise Time/ Fall Time
4N47
tr / tf
0.85
µs
Photodiode Operation
4N48
tr / tf
0.85
µs VCC = 10V, IF = 10mA, RL = 100Ω
4N49
tr / tf
0.85
µs
NOTES:
1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
2. This parameter measured using pulse techniques tw =100µs, duty cycle < 1%.
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
3 - 15
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