ITA18B1 반도체 회로 부품 판매점
BIDIRECTIONAL TRANSILTM ARRAY FOR DATALINE PROTECTION
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 STMicroelectronics |
®
Application Specific Discretes
A.S.D.TM
ITA6V5B1 / ITA10B1
ITA18B1 / ITA25B1
BIDIRECTIONAL TRANSILTM ARRAY
FOR DATALINE PROTECTION
APPLICATIONS
Differential data transmission lines protection :
- RS-232
- RS-423
- RS-422
- RS-485
FEATURES
HIGH SURGE CAPABILITY TRANSIL ARRAY
IPP = 40 A (8/20µs)
PEAK PULSE POWER : 300 W (8/20µs)
UP TO 5 BIDIRECTIONAL TRANSIL FUNCTIONS
LOW CLAMPING FACTOR (VCL / VBR) AT HIGH
CURRENT LEVEL
LOW LEAKAGE CURRENT
ESD PROTECTION UP TO 15kV
SO8
FUNCTIONAL DIAGRAM
DESCRIPTION
Transil diode arrays provide high overvoltage
protectionby clamping action. Their instantaneous
response to transient overvoltages makes them
particularly suited to protect voltage sensitive
devices such as MOS Technology and low voltage
supplied IC’s.
The ITA series allies high surge capability against
energetic pulses with high voltage performance
against ESD.
COMPLIESWITHTHE FOLLOWINGSTANDARDS :
IEC 1000-4-2 : level 4
IEC 1000-4-4 : level 4
IEC 1000-4-5 : level 2
MIL STD 883C - Method 3015-6 : class 3
(human body model)
I/O1 1
I/O2 2
I/O3 3
I/O4 4
8 GND
7
6
5 GND
January 1998 Ed: 2
1/5
ITA6V5B1 / ITA10B1 / ITA18B1 / ITA25B1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
PPP Peak pulse power dissipation (8/20µs)
(see note 1)
Tj initial = Tamb
IPP Peak pulse current (8/20µs) (see note 1) Tj initial = Tamb
I2t Wire I2t value (see note 1)
Tstg Storage temperature range
Tj Maximum operating junction temperature
TL Maximum lead temperature for soldering during 10s
Value
300
Unit
W
40
0.6
- 55 to + 150
125
260
A
A2s
°C
°C
°C
Note 1 : For surges greater than the specified maximum
value, the I/O will first present a short-circuit and after an
open circuit caused by the wire melting.
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
VRM
VBR
VCL
IRM
IPP
αT
C
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ VRM
Peak pulse current
Voltage temperature coefficient
Junction capacitance
%I p p
100
50
8s
Pulse wave form 8/20 s
0
20 s
t
Types
IRM @ VRM
VBR @ IR
max.
min.
note 2
µA V
V mA
ITA6V5B1 10 5 6.5 1
ITA10B1
4
8 10 1
ITA18B1
4
15 18
1
ITA25B1
4
24 25
Note 2 : Between I/O pin and ground.
Note 3 : Between two input Pins at 0V Bias, F = 1 MHz.
Preferred types in bold
1
2/5
®
VCL @ IPP
8/20µs
note 2
VA
10 10
15 10
25 10
33 10
VCL @ IPP
max. 8/20µs
note 2
VA
12 25
αT
max.
10-4/°C
4
19 25
8
28 25
9
38 25 12
C
max.
note 3
pF
750
570
350
300
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
ITA18B1
BIDIRECTIONAL TRANSILTM ARRAY FOR DATALINE PROTECTION - STMicroelectronics
ITA18B3
BIDIRECTIONAL TRANSILTM ARRAY FOR DATALINE PROTECTION - STMicroelectronics