FDP6690S 반도체 회로 부품 판매점
30V N-Channel PowerTrench SyncFET
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 Fairchild Semiconductor |
SEPTEMBER 2001
FDP6690S/FDB6690S
30V N-Channel PowerTrench® SyncFET™
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDP6690S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP6690S/FDB6690S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP6035AL/FDB6035AL in parallel
with a Schottky diode.
Features
• 21 A, 30 V.
RDS(ON) = 15.5 mΩ @ VGS = 10 V
RDS(ON) = 23.0 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (11nC typical)
• High performance trench technology for extremely
low RDS(ON) and fast switching
• High power and current handling capability
DD
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
PD
TJ, TSTG
TL
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB6690S
FDB6690S
13’’
FDP6690S
FDP6690S
Tube
Ratings
30
±20
42
140
48
0.5
–55 to +150
275
2.6
62.5
Tape width
24mm
n/a
S
Units
V
V
A
W
W/°C
°C
°C
°C/W
°C/W
Quantity
800 units
45
©2001 Fairchild Semiconductor Corporation
FDP6690S/FDB6690S Rev C (W)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
W DSS
Drain-Source Avalanche Energy
Single Pulse, VDD = 25 V, ID=11A
IAR Drain-Source Avalanche Current
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 1mA
ID = 10mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 1mA
ID = 10mA, Referenced to 25°C
VGS = 10 V, ID = 21 A
VGS = 4.5 V, ID = 17 A
VGS=10 V, ID =21 A, TJ=125°C
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 23 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15 V, ID = 21A,
VGS = 5 V
Drain–Source Diode Characteristics
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time
Qrr Diode Reverse Recovery Charge
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 3.5 A,
diF/dt = 300 A/µs
(Note 1)
(Note 1)
(Note 2)
Min Typ Max Units
140 mJ
11 A
30 V
25 mV/°C
500
100
–100
µA
nA
nA
1 2.2 3
V
–4 mV/°C
12.0 15.5
18.5 23.0
18.0 22.5
mΩ
60 A
33 S
1238
342
104
pF
pF
pF
11 20
9 18
23 37
13 23
11 15
5
4
ns
ns
ns
ns
nC
nC
nC
0.51
0.69
21
25
0.7
V
nS
nC
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
FDP6690S/FDB6690S Rev C (W)
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제조업체: Fairchild Semiconductor
( fairchild )
FDP6690S data
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관련 데이터시트
FDP6690
30V N-Channel PowerTrench SyncFET - Fairchild Semiconductor
FDP6690S
30V N-Channel PowerTrench SyncFET - Fairchild Semiconductor