FM1608-120-P 반도체 회로 부품 판매점
64Kb Bytewide FRAM Memory
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 ETC |
FM1608
64Kb Bytewide FRAM Memory
Features
64K bit Ferroelectric Nonvolatile RAM
• Organized as 8,192 x 8 bits
• High endurance 10 Billion (1010) read/writes
• 10 year data retention at 85° C
• NoDelay™ write
• Advanced high-reliability ferroelectric process
Superior to BBSRAM Modules
• No battery concerns
• Monolithic reliability
• True surface mount solution, no rework steps
• Superior for moisture, shock, and vibration
• Resistant to negative voltage undershoots
Description
The FM1608 is a 64-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile but operates in other respects as a RAM.
It provides data retention for 10 years while
eliminating the reliability concerns, functional
disadvantages and system design complexities of
battery-backed SRAM. Its fast write and high write
endurance make it superior to other types of
nonvolatile memory.
In-system operation of the FM1608 is very similar to
other RAM based devices. Memory read- and write-
cycles require equal times. The FRAM memory,
however, is nonvolatile due to its unique ferroelectric
memory process. Unlike BBSRAM, the FM1608 is a
truly monolithic nonvolatile memory. It provides the
same functional benefits of a fast write without the
serious disadvantages associated with modules and
batteries or hybrid memory solutions.
These capabilities make the FM1608 ideal for
nonvolatile memory applications requiring frequent or
rapid writes in a bytewide environment. The
availability of a true surface-mount package improves
the manufacturability of new designs, while the DIP
package facilitates simple design retrofits. The
FM1608 offers guaranteed operation over an
industrial temperature range of -40°C to +85°C.
SRAM & EEPROM Compatible
• JEDEC 8Kx8 SRAM & EEPROM pinout
• 120 ns access time
• 180 ns cycle time
• Equal access & cycle time for reads and writes
Low Power Operation
• 15 mA active current
• 20 µA standby current
Industry Standard Configuration
• Industrial temperature -40° C to +85° C
• 28-pin SOP or DIP
Pin Configuration
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
VDD
WE
NC
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
Ordering Information
FM1608-120-P 120 ns access, 28-pin plastic DIP
FM1608-120-S 120 ns access, 28-pin SOP
This data sheet contains design specifications for product development.
These specifications may change in any manner without notice
28 July 2000
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000, Fax (719) 481-7058
www.ramtron.com
1/12
Ramtron
Figure 1. Block Diagram
Pin
A10-A12
Block Decoder
1Kx8
1Kx8
A0-A12
CE
Address
Latch
A0-A7
Row
Decoder
A8-A9
1Kx8
1Kx8
1Kx8
1Kx8
1Kx8
1Kx8
Column Decoder
FM1608
Description
WE Control
Logic
OE
I/O Latch
Bus Driver
DQ0-7
Pin Name Pin Number
A0-A12 2-10, 21, 23-25
DQ0-7
/CE
11-13, 15-19
20
/OE
/WE
VDD
VSS
22
27
28
14
I/O Pin Description
I Address. The 13 address lines select one of 8,192 bytes in the FRAM
array. The address value will be latched on the falling edge of /CE.
I/O Data. 8-bit bi-directional data bus for accessing the FRAM array.
I Chip Enable. /CE selects the device when low. The falling edge of /CE
causes the address to be latched internally. Address changes that
occur after /CE goes low will be ignored until the next falling edge
occurs.
I Output Enable. When /OE is low the FM1608 drives the data bus when
valid data is available. Taking /OE high causes the DQ pins to be tri-
stated.
I Write Enable. Taking /WE low causes the FM1608 to write the contents
of the data bus to the address location latched by the falling edge of
/CE.
I Supply Voltage. 5V
I Ground.
Functional Truth Table
/CE /WE
HX
æX
LH
LL
/OE
X
X
L
X
Function
Standby/Precharge
Latch Address
Read
Write
28 July 2000
2/12
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FM1608-120-P data
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국내 전력반도체 판매점
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전화번호 : 051-319-2877
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