FJP13007 반도체 회로 부품 판매점
High Voltage Switch Mode Application
|
|
 Fairchild Semiconductor |
FJP13007
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
700
400
9
8
16
4
80
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
IEBO
hFE1
hFE2
VCE(sat)
Collector- Emitter Breakdown Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
VBE (sat)
*Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
tON Turn On Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW≤300µs, Duty cycle≤2%
IC = 10mA, IB = 0
VEB = 9V, IC = 0
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
VCB = 10V, f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 5A
IB1 = -IB2 = 1A
RL = 50Ω
hFE Classification
Classification
hFE1
R(H1)
15 ~ 28
Min.
400
8
5
4
Typ.
110
Max.
1
60
30
1
2
3
1.2
1.6
1.6
3
0.7
Units
V
mA
V
V
V
V
V
pF
MHz
µs
µs
µs
O(H2)
26 ~ 39
©2004 Fairchild Semiconductor Corporation
Rev. B, July 2004
Typical Characteristics
100
VCE = 5V
10
1
0.1 1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
1000
100
10
1
0.1 1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
10000
1000
VCC=125V
IC=5IB
tSTG
100
tF
10
0.1
1
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
10
©2004 Fairchild Semiconductor Corporation
10
IC = 3 IB
1
VBE(sat)
0.1 VCE(sat)
0.01
0.1
1 10
IC[A], COLLECTOR CURRENT
Figure 2. Saturation Voltage
100
1000
tR
100
tD, VBE(off)=5V
V =125V
CC
IC=5IB
10
0.1
1
IC[A], COLLECTOR CURRENT
Figure 4. Turn On Time
10
100
10
DC
1
10µs
1ms 100µs
0.1
0.01
1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
Figure 6. Forward Biased Safe Operating Area
Rev. B, July 2004
|
PDF 파일 내의 페이지 : 총 5 페이지
제조업체: Fairchild Semiconductor
( fairchild )
FJP13007 data
데이터시트 다운로드 :
[ FJP13007.PDF ]
[ FJP13007 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
FJP13007
High Voltage Switch Mode Application - Fairchild Semiconductor
FJP13009
High Voltage Switch Mode Application - Fairchild Semiconductor
FJP13009H2TU
High-Voltage Fast-Switching NPN Power Transistor - Fairchild Semiconductor
FJP13009TU
High-Voltage Fast-Switching NPN Power Transistor - Fairchild Semiconductor