2SJ550S 반도체 회로 부품 판매점
Silicon P Channel MOS FET High Speed Power Switching
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 Hitachi Semiconductor |
2SJ550(L),2SJ550(S)
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.075Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
LDPAK
D
G
S
ADE-208-633A (Z)
2nd. Edition
Jun 1998
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
2SJ550(L),2SJ550(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
ID
Drain peak current
I Note1
D(pulse)
Body-drain diode reverse drain current IDR
Avalanche current
I Note3
AP
Avalanche energy
E Note3
AR
Channel dissipation
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Ratings
–60
±20
–15
–60
–15
–15
19
50
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Zero gate voltege drain current IDSS
Gate to source leak current
I GSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
–60
±20
—
—
–1.0
—
—
6.5
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body–drain diode forward voltage VDF
Body–drain diode reverse
recovery time
t rr
—
—
—
—
—
—
Note: 4. Pulse test
Typ
—
—
—
—
—
0.075
0.105
11
850
420
110
12
75
125
75
–1.1
70
Max
—
—
–10
±10
–2.0
0.095
0.155
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = –10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = –1mA, VDS = –10V
ID = –8A, VGS = –10V Note4
ID = –8A, VGS = –4V Note4
ID = –8A, VDS = –10V Note4
VDS = –10V
VGS = 0
f = 1MHz
VGS = –10V, ID = –8A
RL = 3.75Ω
IF = –15A, VGS = 0
IF = –15A, VGS = 0
diF/ dt =50A/µs
2
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