MIP803 반도체 회로 부품 판매점
Silicon MOS IC
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 Panasonic Semiconductor |
Intelligent Power Devices (IPDs)
MIP803, MIP804
Silicon MOS IC
s Features
q Allowing downsizing of the sets through the reduction of a parts
count resulting from the voltage step-up utilizing a coil instead of
a transformer and employing the thin surface mounting package.
q Allowing low voltage drive (adaptable to a small and low-voltage
battery), or VCC = 3V or 1.5V drive
q Allowing to adjust the EL light brightness responding to changes in
oscillation frequency which can be changed by the external resistor.
s Applications
q EL drive
s Recommended Set
q Watches, pagers, portable CD players, cellular phones, MD play-
ers, display panels of remote controllers, and etc.
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Power supply voltage
Input voltage (ENB)
Output voltage (CIL)
Output voltage (ELD)
VCC
VENB
VCIL
VELD
− 0.5 to 4
− 0.5 to VCC + 0.5
− 0.5 to 220
− 0.5 to 220
V
V
V
V
Output current (CIL)
ICIL 60 mA
Output current (ELD)
Allowable power dissipation
Operating ambient temperature
Channel temperature
Storage temperature
IELD
PD
Topr
Tch
Tstg
120
150
−20 to +70
−20 to +125
−55 to +125
mA
mW
°C
°C
°C
s Block Diagram
EL
1 10
56
6.3±0.2
4.3±0.2
unit: mm
2 to 12˚
2 to 6˚
1: GND 6: VCP
2: GND 7: VCC
3: CIL 8: ENB
4: GND 9: RT1
5: ELD 10: RT2
SSONF-10D Package
VCC 7
+
-
VCP 6
8
ENB
Step-up circuit
Oscillation
circuit
9
RT1
10
RT2
CIL
3
ELD
5
TR1 TR2
GND
4
Logic circuit
2 GND
GND
1
1
Intelligent Power Devices (IPDs)
MIP803, MIP804
s Electrical Characteristics (VCC = 2.5V/1.2V, VENB = 2.5V/1.2V, GND = 0, TC = 25 ± 2°C)
Parameter
Symbol
Conditions
min typ max
Supply voltage
MIP803
MIP804 VCC
1.5 2.5 3.5
0.9 3.5
Output frequency
MIP803
MIP804 fOSC
Change of output
frequency
MIP803
MIP804 ∆fv Note)
High level input
voltage (ENB)
MIP803
MIP804 VIH
Low level input
voltage (ENB)
MIP803
MIP804 VIL
Breakdown voltage
VDSS
Saturation
Output current
MIP803
MIP804 IDS
RT = 390kΩ
RT = 240kΩ
RT = 390kΩ
RT = 240kΩ
VCC = 1.5 to 3.5V
VCC = 0.9 to 3.3V
VCC = 1.5 to 3.5V
VCC = 0.9 to 3.3V
IOFF(TR1) = 0.1mA
VDS(TR1) = 20V
119 140 161
195 230 265
−7 7
−15 15
1
0.8
0.3
0.1
200
70
60
(TR1) ON-state
resistance
MIP803
MIP804 RON
IDS(TR1) = 10mA
6.5 10
15
Output
Off-leakage current
Breakdown voltage
Saturation
MIP803
current
MIP804
IOFF
VDSS
IDS
VDS(TR1) = 160V
IOFF(TR2) = 0.1mA
VDS(TR2) = 20V
2
200
15
10
(TR2) ON-state
resistance
MIP803
MIP804 RON
IDS(TR2) = 10mA
0.5 0.75
1
0.7 1 1.4
Off-leakage current
IOFF
Clime power the inside MIP803
voltage
MIP804 VCP
Statically consumption MIP803
current
MIP804 IC
Consumption current
MIP803
MIP804 ICC
VDS(TR2) = 160V
VCC = VENB = 1.5V, CCP = 1000pF, RT = 390kΩ
VCC = VENB = 0.9V, CCP = 1000pF, RT = 240kΩ
VCC = 3.5V, VENB = 0
VCC = 3.3V, VENB = 0
VCC = VENB = 3.5V, RT = 390kΩ
VCC = VENB = 3.3V, RT = 240kΩ
2
2
2
0.1
0.1
1 1.5
1 1.5
Note: ∆fv: Caluculation is made as follows:
∆fv
=
(fosc
/
f1
+
2
f2
−
1)
×
100
MIP803 f1: fosc at VCC = 1.5V, f2: fosc at VCC = 3.5V
MIP804 f1: fosc at VCC = 0.9V, f2: fosc at VCC = 3.5V
Unit
V
kHz
%
V
V
V
mA
Ω
µA
V
mA
kΩ
µA
V
µA
mA
s Pin Descriptions
Pin No.
1
2
3
4
5
6
7
Symbol
GND
GND
CIL
GND
ELD
VCP
VCC
8 ENB
9 RT1
10 RT2
Pin Name
Description
GND pin
GND pin
GND pin
GND pin
Output for voltage step-up Drain pin of the voltage step-up MOS FET
GND pin
GND pin
Output for EL driving Drain pin of the EL drive MOS FET
Internal voltage step-up pin Capacitor connection pin for internal voltage step-up power supply
Power input pin
Power input pin
ENABLE pin
ENABLE signal input pin for controlling the EL driver (if ENB = H, the EL
driver becomes ON and if ENB = L/OPEN, it becomes OFF)
Internal oscillation output Internal oscillation circuit output pin
OSC resistor connecting pin OSC resistor connection pin for connecting the OSC resistor between RT1 and RT2
2
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( panasonic )
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
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관련 데이터시트
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