AT27C800-12TC 반도체 회로 부품 판매점
8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM
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 ATMEL Corporation |
AT27C800
Features
• Read Access Time - 100 ns
• Word-wide or Byte-wide Configurable
• 8-Megabit Flash and Mask ROM Compatable
• Low Power CMOS Operation
- 100 µA Maximum Standby
- 50 mA Maximum Active at 5 MHz
• Wide Selection of JEDEC Standard Packages
- 42-Lead 600 mil Cerdip and PDIP
- 44-Lead SOIC (SOP)
- 48-Lead TSOP (12 mm x 20 mm)
• 5V ± 10% Power Supply
• High Reliability CMOS Technology
- 2,000 ESD Protection
- 200 mA Latchup Immunity
• RapidTM Programming Algorithm - 50 µs/word (typical)
• CMOS and TTL Compatible Inputs and Outputs
• Integrated Product Identification Code
• Commercial and Industrial Temperature Ranges
Description
The AT27C800 is a low-power, high performance 8,388,608-bit UV erasable program-
mable read only memory (EPROM) organized as either 512K by 16 or 1024K by 8
bits. It requires a single 5V power supply in normal read mode operation. Any word
can be accessed in less than 100 ns, eliminating the need for speed-reducing WAIT
states. The x16 organization makes this part ideal for high-performance 16- and 32-bit
microprocessor systems.
(continued)
Pin Configurations
Pin Name
A0 - A18
O0 - O15
O15/A-1
BYTE/VPP
CE
OE
NC
Function
Addresses
Outputs
Output/Address
Byte Mode/
Program Supply
Chip Enable
Output Enable
No Connect
TSOP
Type 1
A15 1
A14 2
A13 3
A12 4
A11 5
A10 6
A9 7
A8 8
NC 9
NC 10
NC 11
NC 12
NC 13
NC 14
NC 15
A18 16
A17 17
A7 18
A6 19
A5 20
A4 21
A3 22
A2 23
A1 24
48 A16
47 BYTE/VPP
46 GND
45 O15/A-1
44 O7
43 O14
42 O6
41 O13
40 O5
39 O12
38 O4
37 VCC
36 O11
35 O3
34 O10
33 O2
32 O9
31 O1
30 O8
29 O0
28 OE
27 GND
26 CE
25 A0
CDIP, PDIP Top View
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
O0
O8
O1
O9
O2
O10
O3
O11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42 NC
41 A8
40 A9
39 A10
38 A11
37 A12
36 A13
35 A14
34 A15
33 A16
32 BYTE/VPP
31 GND
30 O15/A-1
29 O7
28 O14
27 O6
26 O13
25 O5
24 O12
23 O4
22 VCC
SOIC (SOP)
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
O0
O8
O1
O9
O2
O10
O3
O11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 NC
43 NC
42 A8
41 A9
40 A10
39 A11
38 A12
37 A13
36 A14
35 A15
34 A16
33 BYTE/VPP
32 GND
31 O15/A-1
30 O7
29 O14
28 O6
27 O13
26 O5
25 O12
24 O4
23 VCC
8-Megabit
(512K x 16 or
1024K x 8)
UV Erasable
EPROM
AT27C800
Preliminary
0801A-A
1
The AT27C800 can be organized as either word-wide or
byte-wide. The organization is selected via the BYTE/VPP
pin. When BYTE/VPP is asserted high (VIH), the word-wide
organization is selected and the O15/A-1 pin is used for
O15 data output. When BYTE/VPP is asserted low (VIL),the
byte wide organization is selected and the O15/A-1 pin is
used for the address pin A-1. When the AT27C800 is logi-
cally regarded as x16 (word-wide), but read in the byte-
wide mode, then with A-1=VIL the lower eight bits of the 16
bit word are selected with A-1 =VIH the upper 8 bits of the
16-bit word are selected.
In read mode, the AT27C800 typically consumes 15 mA.
Standby mode supply current is typically less than 10 µA.
The AT27C800 is available in industry standard JEDEC-
approved one-time programmable (OTP)PDIP, SOIC
(SOP), and TSOP as well as UV erasable windowed Cer-
dip packages. The device features two-line control(CE,OE)
to eliminate bus contention in high-speed systems.
With high density 512K word or 1024K-bit storage capabil-
ity, the AT27C800 allows firmware to be to be stored reli-
ably and to be accessed by the system without the delays
of mass storage media.
Atmel’s AT27C800 has additional features that ensure high
quality and efficient production use. The RapidTM Program-
ming Algorithm reduces the time required to program the
part and guarantees reliable programming. Programming
time is typically only 50µs/word. The Integrated Product
Identification Code electronically identifies the device and
manufacturer. This feature is used by industry standard
programming equipment to select the proper programming
equipment and voltages.
Erasure Characteristics
The entire memory array of the AT27C800 is erased (all
outputs read as VOH) after exposure to ultraviolet light at a
wavelength of 2,537Å. Complete erasure is assured after a
minimum of 20 minutes of exposure using 12,000 µW/cm2
intensity lamps spaced one inch away from the chip. Mini-
mum erase time for lamps at other intensity ratings can be
calculated from the minimum integrated erasure dose of 15
W.sec/cm2. To prevent unintentional erasure, an opaque
label is recommended to cover the clear window on any UV
erasable EPROM that will be subjected to continuous
flourescent indoor lighting or sunlight.
System Considerations
Switching between active and standby conditions via the
Chip Enable pin may produce transient voltage excursions.
Unless accommodated by the system design, these tran-
sients may exceed data sheet limits, resulting in device
non-conformance. At a minimum, a 0.1 µF high frequency,
low inherent inductance, ceramic capacitor should be uti-
lized for each device. This capacitor should be connected
between the VCC and Ground terminals of the device, as
close to the device as possible. Additionally, to stabilize the
supply voltage level on printed circuit boards with large
EPROM arrays, a 4.7 µF bulk electrolytic capacitor should
be utilized, again connected between the VCC and Ground
terminals. This capacitor should be positioned as close as
possible to the point where the power supply is connected
to the array.
Block Diagram
2 AT27C800
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( atmel )
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관련 데이터시트
AT27C800-12TC
8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM - ATMEL Corporation
AT27C800-12TI
8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM - ATMEL Corporation