CY6116A 반도체 회로 부품 판매점
2K x 8 Static RAM
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 Cypress Semiconductor |
6116A: 11/8/89
Revision: Monday, November 8, 1993
Features
D Adeusteolmecatteidc powerĆdown when
D CMOS for optimum speed/power
D
HĊig2h0
speed
ns
D LĊow55a0cmtivWe power
D LĊow11s0tamnWdby power
D TTLĆcompatible inputs and outputs
D Cthaapna2b0le01oVf weiltehcstrtaonstdaitnicgdgirsecahtaerrge
CCYY66111167AA
2K x 8 Static RAM
Functional Description
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Logic Block Diagram
A10
A9
A8
A7
A6
A5
A4
CE
WE
OE
INPUT BUFFER
128 x 16 x 8
ARRAY
COLUMN
DECODER
POWER
DOWN
A3
A2
A1 A0
Pin Configurations
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
6116A-1
DToIpP/VSiOewJ
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1 24
2 23
3 22
4 21
5 20
6 19
6116A
7 18
8 17
9 16
10
11
12
15
14
13
VCC
A8
A9
WE
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
ToLpCVCiew
A3
A2
NC
NC
A1
A0
I/O0
4 3 2 1 28 27 26
5 25
6 24
7 23
8
6116A
22
9 21
10
20
11
19
1213 14 151617 18
WE
OE
A10
NC
NC
CE
I/O7
6116A-2
ToLpCVCiew
6116A-3
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
4 3 2 1 32 31 30
5
6
7
8
9
10
11
12
13
6117A
29
28
27
26
25
24
23
22
21
14 15 16 17 1819 20
A8
A9
NC
WE
OE
A10
CE
I/O7
I/O6
6116A-4
Selection Guide
Maximum Access Time (ns)
MCuarxriemnut m(mOAp)erating
MCuarxriemnut m(mSAta)ndby
Commercial
Military
Commercial
Military
66111167AA--2200
20
100
40/20
66111167AA--2255
25
100
125
20
40
66111167AA--3355
35
100
100
20
20
66111167AA--4455
45
100
100
20
20
66111167AA--5555
55
80
100
20
20
Cypress Semiconductor Corporation D 3901 North First S1treet D San Jose FebDruarCy A1989851-34ReviDsed D40e8c-em94b3e-r 12969020
6116A: 11/8/89
Revision: Monday, November 8, 1993
CY6116A
CY6117A
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature . . . . . . . . . . . . . . . . . . -65_C to +150_C
Ambient Temperature with
Power Applied . . . . . . . . . . . . . . . . . . . . . . . -55_C to +125_C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12) . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . . -3.0V to +7.0V
Output Current into Outputs (LOW) . . . . . . . . . . . . . . 20 mA
Static Discharge Voltage . . . . . . . . . . . . . . . . . . . . . . . >2001V
(per MILĆSTDĆ883, Method 3015)
LatchĆUp Current . . . . . . . . . . . . . . . . . . . . . . . . . . . >200 mA
Operating Range
Range
Commercial
Military[1]
Ambient
Temperature
0_C to +70_C
-55_C to +125_C
VCC
5V ± 10%
5V ± 10%
Electrical Characteristics Over the Operating Range[2]
6116A-20
6117A-20
6116A-25, 35, 45
6117A-25, 35, 45
6116A-55
6117A-55
Parameter
VOH
VOL
VIH
VIL
IIX
IOZ
IOS
ICC
ISB1
ISB2
Description
Test Conditions
Min. Max.
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage[3]
VCC = Min., IOH = -4.0 mA
VCC = Min., IOL = 8.0 mA
2.4
2.2
-0.5
0.4
VCC
0.8
Input Load Current
Output Leakage
Current
GND < VI < VCC
GND < VI < VCC,
Output Disabled
-10 +10
-10 +10
Output Short
Circuit Current[4]
VCC = Max., VOUT = GND
-300
VCC Operating
Supply Current
VCC = Max.
IOUT = 0 mA
f = fMAX = 1/tRC
Com'l
Mil 25
35, 45
100
Automatic CE
Max. VCC,
PowerĆDown Current CE > VIH
- TTL Inputs
f = fMAX
Com'l
Mil 25
35, 45, 55
40
Automatic CE
PowerĆDown Current
- CMOS Inputs
Max. VCC,
CE > VIH - 0.3V,
VIN > VCC - 0.3V
or VIN < 0.3V,
f=0
Com'l
Mil
20
Min.
2.4
2.2
-0.5
-10
-10
Max.
0.4
VCC
0.8
+10
+10
Min.
2.4
2.2
-0.5
-10
-10
Max.
0.4
VCC
0.8
+10
+10
Unit
V
V
V
V
mA
mA
-300
-300 mA
100 80 mA
125 100
100
20 20 mA
40 20
20
20 20 mA
20 20
Capacitance[5]
Parameter
CIN
COUT
Description
Input Capacitance
Output Capacitance
Test Conditions
TA = 25_C, f = 1 MHz,
VCC = 5.0V
Max.
10
10
Unit
pF
pF
Notes:
1. TA is the instant on" case temperature.
2. See the last page of this specification for Group A subgroup testing inĆ
formation.
3. VIL (min.) = -3.0V for pulse durations less than 30 ns.
4. Not more than 1 output should be shorted at one time. Duration of the
short circuit should not exceed 30 seconds.
5. Tested initially and after any design or process changes that may affect
these parameters.
2
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