파트넘버.co.kr HYB3164805BJ-50 데이터시트 PDF


HYB3164805BJ-50 반도체 회로 부품 판매점

8M x 8-Bit Dynamic RAM



Siemens Semiconductor Group 로고
Siemens Semiconductor Group
HYB3164805BJ-50 데이터시트, 핀배열, 회로
8M x 8-Bit Dynamic RAM
(4k & 8k Refresh, EDO-version)
HYB 3164805BJ/BT(L) -40/-50/-60
HYB 3165805BJ/BT(L) -40/-50/-60
Premininary Information
8 388 608 words by 4-bit organization
0 to 70 °C operating temperature
Hyper Page Mode - EDO - operation
Performance:
-40 -50 -60
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
CAS access time
Access time from address
Read/write cycle time
Hyper page mode (EDO)
cycle time
40
10
20
69
16
50 60 ns
13 15 ns
25 30 ns
84 104 ns
20 25 ns
Single + 3.3 V (± 0.3V) power supply
Low power dissipation:
max. 306 active mW ( HYB 3164805BJ/BT(L)-40)
max. 252 active mW ( HYB 3164805BJ/BT(L)-50)
max. 216 active mW ( HYB 3164805BJ/BT(L)-60)
max. 486 active mW ( HYB 3165805BJ/BT(L)-40)
max. 396 active mW ( HYB 3165805BJ/BT(L)-50)
max. 324 active mW ( HYB 3165805BJ/BT(L)-60)
7.2 mW standby (LVTTL)
3.6 mW standby (LVMOS)
720 µA standby for L-version
Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh
Self refresh (L-version only)
8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164805BJ/BT)
4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165805BJ/BT)
128 msec refresh period for L-versions
Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)400BJ
P-TSOPII-32-1 400 mil
HYB 3164(5)400BT(L)
Semiconductor Group
1
12.97


HYB3164805BJ-50 데이터시트, 핀배열, 회로
HYB3164(5)805BJ/BT(L)-40/-50/-60
8M x 8-DRAM
This HYB3164(5)805B is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is
fabricated in SIEMENS’most advanced 0,25 µm-CMOS silicon gate process technology. The circuit
and process design allow this device to achieve high performance and low power dissipation. The
HYB3164(5)805B operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL
or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)400B to be packaged in a
400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bit
densities and are compatible with commonly used automatic testing and insertion equipment.The
HYB3164(5)805BTL parts have a very low power „sleep mode“supported by Self Refresh.
Ordering Information
Type
8k-refresh versions:
HYB 3164805BJ-40
HYB 3164805BJ-50
HYB 3164805BJ-60
HYB 3164805BT-40
HYB 3164805BT-50
HYB 3164805BT-60
HYB 3164805BTL-50
HYB 3164805BTL-60
4k-refresh versions:
HYB 3165805BJ-40
HYB 3165805BJ-50
HYB 3165805BJ-60
HYB 3165805BT-40
HYB 3165805BT-50
HYB 3165805BT-60
HYB 3165805BTL-50
HYB 3165805BTL-60
Ordering
Code
Package
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
Descriptions
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
Semiconductor Group
2




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HYB3164805BJ-50

8M x 8-Bit Dynamic RAM - Siemens Semiconductor Group