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Siemens Semiconductor Group |
8M x 8-Bit Dynamic RAM
(4k & 8k Refresh, EDO-Version)
HYB 3164805AJ/AT(L) -40/-50/-60
HYB 3165805AJ/AT(L) -40/-50/-60
Advanced Information
• 8 388 608 words by 8-bit organization
• 0 to 70 °C operating temperature
• Hyper Page Mode - EDO - operation
• Performance:
-40 -50 -60
tRAC RAS access time
40 50 60 ns
tCAC CAS access time
10 13 15 ns
tAA Access time from address 20 25 30 ns
tRC Read/write cycle time
69 84 104 ns
tHPC Hyper page mode (EDO) 16 20 25 ns
cycle time
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
max. 450 active mW ( HYB 3164805AJ/AT(L)-40)
max. 360 active mW ( HYB 3164805AJ/AT(L)-50)
max. 324 active mW ( HYB 3164805AJ/AT(L)-60)
max. 612 active mW ( HYB 3165805AJ/AT(L)-40)
max. 468 active mW ( HYB 3165805AJ/AT(L)-50)
max. 432 active mW ( HYB 3165805AJ/AT(L)-60)
7.2 mW standby (LVTTL)
3.24 mW standby (LVMOS)
720 µA standby for L-version
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh
• Self refresh (L-version only)
• 8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164805AJ/AT)
4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165805AJ/AT)
• 256 msec refresh period for L-versions
• Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)805AJ
P-TSOPII-32-1 400 mil
HYB 3164(5)805AT(L)
Semiconductor Group
1
6.97
HYB3164(5)805AJ/AT(L)-40/-50/-60
8M x 8-DRAM
This HYB3164(5)805A is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is
fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process
technology. The circuit and process design allow this device to achieve high performance and low
power dissipation. The HYB3164(5)805A operates with a single 3.3 +/-0.3V power supply and
interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB
3164(5)805A to be packaged in a 400mil wide SOJ-32 or TSOP-32 plastic package. These
packages provide high system bit densities and are compatible with commonly used automatic
testing and insertion equipment.The HYB3164(5)805ATL parts have a very low power „sleep mode“
supported by Self Refresh.
Ordering Information
Type
8k-refresh versions:
HYB 3164805AJ-40
HYB 3164805AJ-50
HYB 3164805AJ-60
HYB 3164805AT-40
HYB 3164805AT-50
HYB 3164805AT-60
HYB 3164805ATL-50
HYB 3164805ATL-60
4k-refresh versions:
HYB 3165805AJ-40
HYB 3165805AJ-50
HYB 3165805AJ-60
HYB 3165805AT-40
HYB 3165805AT-50
HYB 3165805AT-60
HYB 3165805ATL-50
HYB 3165805ATL-60
Ordering
Code
Package
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
Descriptions
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
Semiconductor Group
2
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