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Siemens Semiconductor Group |
16M x 4-Bit Dynamic RAM
(4k & 8k Refresh, EDO-version)
HYB 3164405BJ/BT(L) -40/-50/-60
HYB 3165405BJ/BT(L) -40/-50/-60
Preliminary Information
• 16 777 216 words by 4-bit organization
• 0 to 70 °C operating temperature
• Hyper Page Mode - EDO - operation
• Performance:
-40 -50 -60
tRAC
tCAC
tAA
tRC
tHPC
RAS access time
CAS access time
Access time from address
Read/write cycle time
Hyper page mode (EDO)
cycle time
40
10
20
69
16
50 60 ns
13 15 ns
25 30 ns
84 104 ns
20 25 ns
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
max. 306 active mW ( HYB 3164405BJ/BT(L)-40)
max. 252 active mW ( HYB 3164405BJ/BT(L)-50)
max. 216 active mW ( HYB 3164405BJ/BT(L)-60)
max. 486 active mW ( HYB 3165405BJ/BT(L)-40)
max. 396 active mW ( HYB 3165405BJ/BT(L)-50)
max. 324 active mW ( HYB 3165405BJ/BT(L)-60)
7.2 mW standby (LVTTL)
3.6 mW standby (LVMOS)
720 µA standby for L-version
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh
• Self refresh (L-version only)
• 8192 refresh cycles/128 ms, 13 R/ 11C addresses (HYB 3164405BJ/BT)
4096 refresh cycles / 64 ms, 12 R/ 12C addresses (HYB 3165405BJ/BT)
• 128 msec refresh period for L-versions
• Plastic Package:
P-SOJ-32-1 400 mil HYB 3164(5)400BJ
P-TSOPII-32-1 400 mil HYB 3164(5)400BT(L)
Semiconductor Group
1
12.97
HYB3164(5)405BJ/BT(L)-40/-50/-60
16M x 4-DRAM
This HYB3164(5)405B is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is
fabricated in SIEMENS’most advanced 0,25 µm-CMOS silicon gate process technology. The circuit
and process design allow this device to achieve high performance and low power dissipation. The
HYB3164(5)405B operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL
or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)400B to be packaged in a
400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bit
densities and are compatible with commonly used automatic testing and insertion equipment.The
HYB3164(5)405BTL parts have a very low power „sleep mode“supported by Self Refresh.
Ordering Information
Type
8k-refresh versions:
HYB 3164405BJ-40
HYB 3164405BJ-50
HYB 3164405BJ-60
HYB 3164405BT-40
HYB 3164405BT-50
HYB 3164405BT-60
HYB 3164405BTL-50
HYB 3164405BTL-60
4k-refresh versions:
HYB 3165405BJ-40
HYB 3165405BJ-50
HYB 3165405BJ-60
HYB 3165405BT-40
HYB 3165405BT-50
HYB 3165405BT-60
HYB 3165405BTL-50
HYB 3165405BTL-60
Ordering
Code
Package
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
Descriptions
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
Semiconductor Group
2
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