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Siemens Semiconductor Group |
16M x 4-Bit Dynamic RAM
(4k & 8k Refresh, EDO-Version)
HYB 3164405AJ/AT(L) -40/-50/-60
HYB 3165405AJ/AT(L) -40/-50/-60
Advanced Information
• 16 777 216 words by 4-bit organization
• 0 to 70 °C operating temperature
• Hyper Page Mode - EDO - operation
• Performance:
-40 -50 -60
tRAC RAS access time
40 50 60 ns
tCAC CAS access time
10 13 15 ns
tAA Access time from address 20 25 30 ns
tRC Read/write cycle time
69 84 104 ns
tHPC Hyper page mode (EDO) 16 20 25 ns
cycle time
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
max. 450 active mW ( HYB 3164405AJ/AT(L)-40)
max. 360 active mW ( HYB 3164405AJ/AT(L)-50)
max. 324 active mW ( HYB 3164405AJ/AT(L)-60)
max. 612 active mW ( HYB 3165405AJ/AT(L)-40)
max. 405 active mW ( HYB 3165405AJ/AT(L)-50)
max. 432 active mW ( HYB 3165405AJ/AT(L)-60)
7.2 mW standby (LVTTL)
3.24 mW standby (LVMOS)
720 µA standby for L-version
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh
• Self refresh (L-version only)
• 8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164405AJ/AT)
4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165405AJ/AT)
• 256 msec refresh period for L-versions
• Plastic Package:
P-SOJ-32-1 400 mil HYB 3164(5)400AJ
P-TSOPII-32-1 400 mil HYB 3164(5)400AT(L)
Semiconductor Group
1
6.97
HYB3164(5)405AJ/AT(L)-40/-50/-60
16M x 4-DRAM
This HYB3164(5)405A is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is
fabricated on an advanced second generation 64Mbit 0,35µm-CMOS silicon gate process
technology. The circuit and process design allow this device to achieve high performance and low
power dissipation. The HYB3164(5)405A operates with a single 3.3 +/-0.3V power supply and
interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB
3164(5)405A to be packaged in a 400mil wide SOJ-32 or TSOP-32 plastic package. These
packages provide high system bit densities and are compatible with commonly used automatic
testing and insertion equipment.The HYB3164(5)405ATL parts have a very low power „sleep mode“
supported by Self Refresh.
Ordering Information
Type
8k-refresh versions:
HYB 3164405AJ-40
HYB 3164405AJ-50
HYB 3164405AJ-60
HYB 3164405AT-40
HYB 3164405AT-50
HYB 3164405AT-60
HYB 3164405ATL-50
HYB 3164405ATL-60
4k-refresh versions:
HYB 3165405AJ-40
HYB 3165405AJ-50
HYB 3165405AJ-60
HYB 3165405AT-40
HYB 3165405AT-50
HYB 3165405AT-60
HYB 3165405ATL-50
HYB 3165405ATL-60
Ordering
Code
Package
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
Descriptions
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
400 mil
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 40 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
Semiconductor Group
2
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