HYB3164165ATL-60 반도체 회로 부품 판매점
4M x 16-Bit Dynamic RAM
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 Siemens Semiconductor Group |
4M x 16-Bit Dynamic RAM
(8k, 4k & 2k Refresh, EDO-Version)
Advanced Information
HYB 3164165AT(L) -40/-50/-60
HYB 3165165AT(L) -40/-50/-60
HYB 3166165AT(L) -40/-50/-60
• 4 194 304 words by 16-bit organization
• 0 to 70 °C operating temperature
• Hyper Page Mode - EDO - operation
• Performance:
-40 -50 -60
tRAC RAS access time
40 50 60 ns
tCAC CAS access time
10 13 15 ns
tAA Access time from address 20 25 30 ns
tRC Read/write cycle time
69 84 104 ns
tHPC Hyper page mode (EDO) 16 20 25 ns
cycle time
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
-40
HYB3166165AT(L)
1008
HYB3165165AT(L)
756
HYB3164165AT(L)
612
-50
612
504
324
-60
450 mW
360 mW
324 mW
7.2 mW standby (TTL)
3.24 mW standby (MOS)
720 µA standby for L-version
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and Self Refresh (L-version only
• 2 CAS / 1 WE byte control
• 8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164165AT)
4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165165AT)
2048 refresh cycles/ 32 ms , 11 R/ 11C addresses (HYB 3166165AT)
• 256ms refresh period for L-versions
• Plastic Package: P-TSOPII-50 400 mil
Semiconductor Group
1
6.97
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
This device is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated on
an advanced first generation 64Mbit 0,35 µm CMOS silicon gate process technology. The circuit
and process design allow this device to achieve high performance and low power dissipation. The
HYB3164(5)165AT operates with a single 3.3 +/-0.3V power supply and interfaces with either
LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB3164(5/6)165AT to be
packaged in 400mil wide TSOPII-50 package. These packages provide high system bit densities
and are compatible with commonly used automatic testing and insertion equipment. The
HYB3164(5/6)165ATL parts have a very low power „sleep mode“ supported by Self Refresh.
Ordering Information
Type
8k-refresh versions:
HYB 3164165AT-40
HYB 3164165AT-50
HYB 3164165AT-60
HYB 3164165ATL-50
HYB 3164165ATL-60
4k-refresh versions:
HYB 3165165AT-40
HYB 3165165AT-50
HYB 3165165AT-60
HYB 3165165ATL-50
HYB 3165165ATL-60
2k-refresh versions:
HYB 3166165AT-40
HYB 3166165AT-50
HYB 3166165AT-60
HYB 3166165ATL-50
HYB 3166165ATL-60
Ordering
Code
Package
Descriptions
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
400 mil
400 mil
400 mil
400 mil
400 mil
EDO-DRAM (access time 40 ns)
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
400 mil
400 mil
400 mil
400 mil
400 mil
EDO-DRAM (access time 40 ns)
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
P-TSOPII-50
400 mil
400 mil
400 mil
400 mil
400 mil
EDO-DRAM (access time 40 ns)
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
EDO-DRAM (access time 50 ns)
EDO-DRAM (access time 60 ns)
Semiconductor Group
2
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PDF 파일 내의 페이지 : 총 29 페이지
제조업체: Siemens Semiconductor Group
( siemens )
HYB3164165ATL-60 data
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[ HYB3164165ATL-60.PDF ]
[ HYB3164165ATL-60 다른 제조사 검색 ]
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[ 홈페이지 ]
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