HYB3118165BSJ-50 반도체 회로 부품 판매점
1M x 16-Bit Dynamic RAM 1k Refresh
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 Siemens Semiconductor Group |
1M × 16-Bit Dynamic RAM
1k Refresh
(Hyper Page Mode-EDO)
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
Advanced Information
• 1 048 576 words by 16-bit organization
• 0 to 70 °C operating temperature
• Hyper Page Mode-EDO-operation
• Performance:
tRAC RAS access time
tCAC CAS access time
tAA Access time from address
tRC Read/Write cycle time
tHPC Hyper page mode (EDO) cycle time
-50 -60
50 60 ns
13 15 ns
25 30 ns
84 104 ns
20 25 ns
• Power Dissipation, Refresh & Addressing:
Power Supply
Addressing
Refresh
Active
TTL Standby
CMOS Standby
HYB5118165 HYB3118165
-50 -60 -50 -60
5 V ± 10 %
3.3 V ± 0.3 V
10/10
10/10
1024 cycles / 16 ms
715 632 468 414
11 7.2
5.5 3.6
mW
mW
mW
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh
• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
• Plastic Package: P-SOJ-42-1
400 mil
P-TSOPII-50/44-1 400 mil
Semiconductor Group
1
1998-10-01
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M × 16 EDO-DRAM
The HYB 5(3)118165 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized
as 1 048 576 words by 16-bits. The HYB 5(3)118165 utilizes a submicron CMOS silicon gate
process technology, as well as advanced circuit techniques to provide wide operating margins, both
internally and for the system user. Multiplexed address inputs permit the HYB 5(3)18165 to be
packaged in a standard SOJ-42 and TSOPII-50/44 plastic package with 400 mil width. These
packages provide high system bit densities and are compatible with commonly used automatic
testing and insertion equipment.
Ordering Information
Type
Ordering Code Package
Descriptions
HYB 5118165BSJ-50 Q67100-Q1107 P-SOJ-42-1 400 mil
5 V 50 ns EDO-DRAM
HYB 5118165BSJ-60 Q67100-Q1108 P-SOJ-42-1 400 mil
5 V 60 ns EDO-DRAM
HYB 3118165BSJ-50 on request
P-SOJ-42-1 400 mil
3.3 V 50 ns EDO-DRAM
HYB 3118165BSJ-60 on request
P-SOJ-42-1 400 mil
3.3 V 60 ns EDO-DRAM
HYB 5118165BST-50 on request
P-TSOPII-50/44-1 400 mil 5 V 50 ns EDO-DRAM
HYB 5118165BST-60 on request
P-TSOPII-50/44-1 400 mil 5 V 60 ns EDO-DRAM
HYB 3118165BST-50 on request
P-TSOPII-50/44-1 400 mil 3.3 V 50 ns EDO-DRAM
HYB 3118165BST-60 on request
P-TSOPII-50/44-1 400 mil 3.3 V 60 ns EDO-DRAM
Semiconductor Group
2
1998-10-01
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PDF 파일 내의 페이지 : 총 24 페이지
제조업체: Siemens Semiconductor Group
( siemens )
HYB3118165BSJ-50 data
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[ HYB3118165BSJ-50.PDF ]
[ HYB3118165BSJ-50 다른 제조사 검색 ]
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