2N5545 반도체 회로 부품 판매점
Monolithic N-Channel JFET Duals
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 Vishay |
2N5545/46/47/JANTX/JANTXV
Vishay Siliconix
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number VGS(off) (V)
2N5545
–0.5 to –4.5
2N5546
–0.5 to –4.5
2N5547
–0.5 to –4.5
V(BR)GSS Min (V)
–50
–50
–50
gfs Min (mS)
1.5
1.5
1.5
IG Max (pA)
–50
–50
–50
jVGS1 – VGS2j Max (mV)
5
10
15
FEATURES
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 3 pA
D Low Noise
D High CMRR: 100 dB
BENEFITS
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time
Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
APPLICATIONS
D Wideband Differential Amps
D High-Speed, Temp-Compensated,
Single-Ended Input Amps
D High-Speed Comparators
D Impedance Converters
DESCRIPTION
The 2N5545/5546/5547JANTX/JANTXV are monolithic dual
n-channel JFETs designed to provide high input impedance
(IG < 50 pA) for general-purpose differential amplifiers. The
2N5545 features minimum system error and calibration (5 mV
offset maximum).
TO-71
S1
1
D1 2
G2
6
5 D2
3
G1
4
Top View
S2
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipation :
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
Document Number: 70253
S-04031—Rev. C, 04-Jun-01
www.vishay.com
8-1
2N5545/46/47/JANTX/JANTXV
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source
Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Gate-Source
Forward Voltage
Dynamic
Common-Source Forward
Transconductanceb
Common-Source
Output Conductanceb
Common-Source
Input Capacitance
Common-Source Reverse
Transfer Capacitance
Equivalent Input
Noise Voltage
Noise Figure
Matching
Differential
Gate-Source Voltage
Gate-Source Voltage
Differential Change
with Temperature
Saturation Drain
Current Ratioc
Transconductance Ratioc
Symbol
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
VGS(F)
gfs
gos
Ciss
Crss
en
NF
|VG7S1 – VGS2|
D|VGS1 – VGS2|
DT
IDSS1
IDSS2
gfs1
gfs2
Test Conditions
2N5545
Typa Min Max
IG = –1 mA, VDS = 0 V
VDS = 15 V, ID = 0.5 nA
VDS = 15 V, VGS = 0 V
VGS = –30 V, VDS = 0 V
TA = 150_C
VDG = 15 V, ID = 200 mA
IG = 1 mA , VDS = 0 V
–57 –50
–2 –0.5 –4.5
3 0.5 8
–10 –100
–20 –150
–3 –50
0.7
VDS = 15 V, VGS = 0 V
f = 1 kHz
VDS = 15 V, VGS = 0 V
f = 1 MHz
VDS = 15 V, ID = 200 mA
f = 10 Hz
RG = 1 MW
2.5 1.5 6.0
2 25
3.5 6
1.3 2
20 180
0.1 3.5
VDG = 15 V, ID = 50 mA
VDG = 15 V, ID = 200 mA
VDG = 15 V, ID = 200 mA
TA = –55 to 125_C
VDS = 15 V, VGS = 0 V
VDS = 15 V, ID = 200 mA
f = 1 kHz
5
5
10
0.98 0.95 1
0.99 0.97 1
Limits
2N5546
Min Max
–50
–0.5
0.5
–4.5
8
–100
–150
–50
1.5 6.0
25
6
2
200
5
10
10
20
0.9 1
0.95
1
2N5547
Min Max
–50
–0.5
0.5
–4.5
8
–100
–150
–50
1.5 6.0
25
6
2
15
15
40
0.9 1
0.9 1
Unit
V
mA
pA
nA
pA
V
mS
mS
pF
nV⁄
√Hz
dB
mV
mV/
_C
Differential Output
Conductance
|gos1 – gos2|
VDG = 15 V, VGS = 0 V
f = 1 kHz
0.1
1
2
3 mS
Differential Gate Current
|IG1 – IG2|
VDG = 15 V, ID = 200 mA
TA = 125_C
1
5
5
5 nA
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Assumes smaller value in the numerator.
NQP
www.vishay.com
8-2
Document Number: 70253
S-04031—Rev. C, 04-Jun-01
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