CAT24WC16WI-TE13D 반도체 회로 부품 판매점
1K/2K/4K/8K/16K-Bit Serial E2PROM
|
|
 Catalyst Semiconductor |
CAT24WC01/02/04/08/16
1K/2K/4K/8K/16K-Bit Serial E2PROM
FEATURES
s 400 KHZ I2C Bus Compatible*
s 1.8 to 6.0Volt Operation
s Low Power CMOS Technology
s Write Protect Feature
— Entire Array Protected When WP at VIH
s Page Write Buffer
DESCRIPTION
s Self-Timed Write Cycle with Auto-Clear
s 1,000,000 Program/Erase Cycles
s 100 Year Data Retention
s 8-pin DIP, 8-pin SOIC or 8 pin TSSOP
s Commercial, Industrial and Automotive
Temperature Ranges
The CAT24WC01/02/04/08/16 is a 1K/2K/4K/8K/16K-
bit Serial CMOS E2PROM internally organized as 128/
256/512/1024/2048 words of 8 bits each. Catalyst’s
advanced CMOS technology substantially reduces de-
vice power requirements. The the CAT24WC01/02/04/
08/16 feature a 16-byte page write buffer. The device
operates via the I2C bus serial interface, has a special
write protection feature, and is available in 8-pin DIP, 8-
pin SOIC or 8-pin TSSOP.
PIN CONFIGURATION
DIP Package (P)
SOIC Package (J)
A0
A1
A2
VSS
1
2
3
4
8 VCC
7 WP
6 SCL
5 SDA
A0
A1
A2
VSS
1
2
3
4
8 VCC
7 WP
6 SCL
5 SDA
5020 FHD F01
TSSOP Package (U)
(* Available for 24WC01 and 24WC02 only)
A0
A1
A2
VSS
1
2
3
4
8 VCC
7 WP
6 SCL
5 SDA
BLOCK DIAGRAM
EXTERNAL LOAD
VCC
VSS
DOUT
ACK
WORD ADDRESS
BUFFERS
SENSE AMPS
SHIFT REGISTERS
COLUMN
DECODERS
SDA
START/STOP
LOGIC
XDEC
E2PROM
CONTROL
WP LOGIC
PIN FUNCTIONS
Pin Name
Function
A0, A1, A2 Device Address Inputs
SDA
Serial Data/Address
SCL Serial Clock
WP Write Protect
VCC +1.8V to +6.0V Power Supply
VSS Ground
SCL
A0
A1
A2
STATE COUNTERS
SLAVE
ADDRESS
COMPARATORS
* Catalyst Semiconductor is licensed by Philips Corporation to carry the I2C Bus Protocol.
DATA IN STORAGE
HIGH VOLTAGE/
TIMING CONTROL
24WCXX F03
© 1999 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 25051-00 3/98 S-1
CAT24WC01/02/04/08/16
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55°C to +125°C
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground(1) ........... –2.0V to +VCC + 2.0V
VCC with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) .................................. 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current(2) ........................ 100mA
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Min.
NEND(3)
TDR(3)
VZAP(3)
ILTH(3)(4)
Endurance
Data Retention
ESD Susceptibility
Latch-up
1,000,000
100
2000
100
Max.
Units
Cycles/Byte
Years
Volts
mA
Reference Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
D.C. OPERATING CHARACTERISTICS
VCC = +1.8V to +6.0V, unless otherwise specified.
Limits
Symbol
Parameter
Min.
Typ.
ICC
ISB(5)
Power Supply Current
Standby Current (VCC = 5.0V)
ILI Input Leakage Current
ILO Output Leakage Current
VIL Input Low Voltage
–1
VIH Input High Voltage
VCC x 0.7
VOL1 Output Low Voltage (VCC = 3.0V)
VOL2 Output Low Voltage (VCC = 1.8V)
Max.
3
0
10
10
VCC x 0.3
VCC + 0.5
0.4
0.5
Units
mA
µA
µA
µA
V
V
V
V
Test Conditions
fSCL = 100 KHz
VIN = GND or VCC
VIN = GND to VCC
VOUT = GND to VCC
IOL = 3 mA
IOL = 1.5 mA
CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5V
Symbol
Test
Max.
Units
Conditions
CI/O(3) Input/Output Capacitance (SDA)
8 pF
VI/O = 0V
CIN(3) Input Capacitance (A0, A1, A2, SCL, WP)
6
pF
VIN = 0V
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC + 2.0V for periods of less than 20ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.
(5) Standby Current (ISB) = 0µA (<900nA).
Doc. No. 25051-00 3/98 S-1
2
|
PDF 파일 내의 페이지 : 총 9 페이지
제조업체: Catalyst Semiconductor
( catalyst )
CAT24WC16WI-TE13D data
데이터시트 다운로드 :
[ CAT24WC16WI-TE13D.PDF ]
[ CAT24WC16WI-TE13D 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
CAT24WC16WI-TE13D
1K/2K/4K/8K/16K-Bit Serial E2PROM - Catalyst Semiconductor
CAT24WC16WI-TE13F
1K/2K/4K/8K/16K-Bit Serial E2PROM - Catalyst Semiconductor