MSN0675D 반도체 회로 부품 판매점
N-Channel Enhancement Mode Power MOS FET
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 MORESEMI |
MSN0675D
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =60V,ID =75A
RDS(ON) < 11.5mΩ @ VGS=10V
(Typ:9.1mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible Power Supply
PIN Configuration
Lead Free
Marking and pin assignment
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0675D
MSN0675D
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
IDM
PD
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
75
50
300
110
0.73
450
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.36 ℃/W
MORE Semiconductor Company Limited
http://www.moresemi.com
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MSN0675D
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Symbol
Condition
Min Typ Max Unit
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
60 68
-
--
1
- - ±100
V
μA
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=30A
VDS=25V,ID=30A
23
- 9.1
20 -
4
11.5
-
V
mΩ
S
Clss
- 2350
-
PF
VDS=25V,VGS=0V,
Coss
- 237
-
PF
F=1.0MHz
Crss
- 205
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
- 16
VDD=30V,ID=2A,RL=15Ω - 10
VGS=10V,RG=2.5Ω
- 45
- 12
VDS=30V,ID=30A,
VGS=10V
- 50
- 12
- 16
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=30A
- - 1.2
V
IS
--
75
A
trr
TJ = 25°C, IF =75A
- 28
Qrr
di/dt = 100A/μs(Note3)
- 49
nS
nC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω
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http://www.moresemi.com
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MSN0675D data
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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